Nonpolar GaAs Nanowires Catalyzed by Cu5As2: Insights into As Layer Epitaxy

doi:10.1021/acsomega.0c03817

	Nonpolar GaAs Nanowires Catalyzed by Cu5As2: Insights into As Layer Epitaxy
	Wang, Hang 1,2; Wang, Anqi 1,3; Wang, Ying 4; Yang, Zaixing 5,6; Yang, Jun 2; Han, Ning 1,3; Chen, Yunfa 1,3
刊名	ACS OMEGA
	2020-12-08
卷号	5 期号:48 页码:30963-30970
ISSN号	2470-1343
DOI	10.1021/acsomega.0c03817
英文摘要	Controlled synthesis of GaAs nanowires (NWs) with specific phases and orientations is important and challenging, which determines their electronic performances. Herein, single-crystalline GaAs NWs are successfully synthesized by using complementary metal-oxide semiconductor compatible Cu2O catalysts via chemical vapor deposition at an optimized temperature of 560 degrees C. In contrast to typically Au catalyzed GaAs NWs, the Cu2O catalyzed ones are found to grow along nonpolar orientations of zincblende <110> and <211> and wurtzite <<(1)over bar>100> and <<(2)over bar>110>. The Cu2O catalysts are found to change into orthorhombic Cu5As2 after the NW growth, which is also significantly distinguished from the Au-Ga catalyst alloy in the literature. The Cu5As2 alloy plays the epitaxy role in the nonpolar GaAs NW growth due to the lattice matching with the nonpolar planes of GaAs, which is verified by the atomic stack model. These nonpolar oriented GaAs NWs have minimized stacking faults, promising for the other semiconductor synthesis as well as electronic applications.
资助项目	National Natural Science Foundation of China[51602314] ; National Natural Science Foundation of China[61504151] ; National Key R&D Program of China[2017YFA0305500] ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences[122111KYSB20150064]
WOS关键词	GROWTH ; MECHANISM ; MOBILITY ; ATOMS
WOS研究方向	Chemistry
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000599316200020
资助机构	National Natural Science Foundation of China ; National Key R&D Program of China ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences
内容类型	期刊论文
源URL	[http://ir.ipe.ac.cn/handle/122111/42956]
专题	中国科学院过程工程研究所
通讯作者	Yang, Jun; Han, Ning; Chen, Yunfa
作者单位	1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China 2.Xian Univ Architecture & Technol, Sch Met Engn, Xian 710055, Peoples R China 3.Chinese Acad Sci, Ctr Excellence Reg Atmospher Environm, Inst Urban Environm, Xiamen 361021, Peoples R China 4.Beijing Jiaotong Univ, Sch Sci, Dept Phys, Beijing 100044, Peoples R China 5.Shandong Univ, Ctr Nanoelect, Jinan 250100, Peoples R China 6.Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China
推荐引用方式 GB/T 7714	Wang, Hang,Wang, Anqi,Wang, Ying,et al. Nonpolar GaAs Nanowires Catalyzed by Cu5As2: Insights into As Layer Epitaxy[J]. ACS OMEGA,2020,5(48):30963-30970.
APA	Wang, Hang.,Wang, Anqi.,Wang, Ying.,Yang, Zaixing.,Yang, Jun.,...&Chen, Yunfa.(2020).Nonpolar GaAs Nanowires Catalyzed by Cu5As2: Insights into As Layer Epitaxy.ACS OMEGA,5(48),30963-30970.
MLA	Wang, Hang,et al."Nonpolar GaAs Nanowires Catalyzed by Cu5As2: Insights into As Layer Epitaxy".ACS OMEGA 5.48(2020):30963-30970.