Wetting behavior and reaction mechanism of molten Si in contact with silica substrate

doi:10.1016/j.ceramint.2019.07.123

	Wetting behavior and reaction mechanism of molten Si in contact with silica substrate
	Wang, Qinghu 2; He, Gang 1; Deng, Shuxiang 1; Liu, Jun 2; Li, Xiaoyu 3; Li, Jianqiang 3; Li, Yawei 2; Li, Jiangtao 1
刊名	CERAMICS INTERNATIONAL
	2019-12-01
卷号	45 期号:17 页码:21365-21372
关键词	Wetting behavior Reaction mechanism Multicrystalline silicon SiO2 substrate
ISSN号	0272-8842
DOI	10.1016/j.ceramint.2019.07.123
英文摘要	The photovoltaic silicon ingot is currently grown in silica (SiO2) crucible. However, adhesion between Si ingot and SiO2 crucible occurred frequently, leading to cracking in Si ingot. To solve these problems, it is important to understand the Si/SiO2 interfacial wetting behavior and reaction mechanism at high temperature. In this paper, the sessile drop technology and microstructural analysis method were used to study the Si/SiO2 interfacial wetting behavior and reaction mechanism at high temperature. The results show that the contact angle of Si drop on SiO2 substrate is 83.5 +/- 2 degrees. The interfacial reaction occurs between Si melt and SiO2 substrate at high temperature, causing uneven surface of substrate with many grooves. The Si melt fills grooves at high temperature and expands during solidification, which results in interlock structure and adhesion at Si/SiO(2 )interface. Finally, adhesion and cracking phenomena are interpreted by analytical models.
资助项目	National Natural Science Foundation of China[51572268] ; National Natural Science Foundation of China[51702240] ; National Natural Science Foundation of China[51702331] ; National Natural Science Foundation of China[51674232] ; National Key Research and Development Program of China[2017YFB0310303]
WOS关键词	SESSILE DROP ; CRISTOBALITE CRYSTALLIZATION ; WETTABILITY ; EVAPORATION ; INTERFACE ; ALUMINA ; CARBON ; STEEL ; MGO
WOS研究方向	Materials Science
语种	英语
出版者	ELSEVIER SCI LTD
WOS记录号	WOS:000493212500038
资助机构	National Natural Science Foundation of China ; National Key Research and Development Program of China
内容类型	期刊论文
源URL	[http://ir.ipe.ac.cn/handle/122111/39123]
专题	中国科学院过程工程研究所
通讯作者	Wang, Qinghu; He, Gang
作者单位	1.Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China 2.Wuhan Univ Sci & Technol, State Key Lab Refractories & Met, Natl Prov Joint Engn Res Ctr High Temp Mat & Lini, Wuhan 430081, Hubei, Peoples R China 3.Chinese Acad Sci, Natl Engn Lab Hydrometallurg Cleaner Prod Technol, CAS Key Lab Green Proc & Engn, Inst Proc Engn, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Wang, Qinghu,He, Gang,Deng, Shuxiang,et al. Wetting behavior and reaction mechanism of molten Si in contact with silica substrate[J]. CERAMICS INTERNATIONAL,2019,45(17):21365-21372.
APA	Wang, Qinghu.,He, Gang.,Deng, Shuxiang.,Liu, Jun.,Li, Xiaoyu.,...&Li, Jiangtao.(2019).Wetting behavior and reaction mechanism of molten Si in contact with silica substrate.CERAMICS INTERNATIONAL,45(17),21365-21372.
MLA	Wang, Qinghu,et al."Wetting behavior and reaction mechanism of molten Si in contact with silica substrate".CERAMICS INTERNATIONAL 45.17(2019):21365-21372.