Sub-5 nm Lithography with Single GeV Heavy Ions Using Inorganic Resist | |
Liu, Qing1; Zhao, Jing2,3; Guo, Jinlong2,3; Wu, Ruqun2,3; Liu, Wenjing2,3; Chen, Yiqin1; Du, Guanghua2,3; Duan, Huigao1 | |
刊名 | NANO LETTERS |
2021-03-24 | |
卷号 | 21期号:6页码:2390-2396 |
关键词 | Nanolithography Heavy Ions Single-digit Nanometer Atomic-scale Fabrication Inorganic Resist |
ISSN号 | 1530-6984 |
DOI | 10.1021/acs.nanolett.0c04304 |
通讯作者 | Du, Guanghua(gh_du@impcas.ac.cn) ; Duan, Huigao(duanhg@hnu.edu.cn) |
英文摘要 | In this work, we demonstrate a process having the capability to realize single-digit nanometer lithography using single heavy ions. By adopting 2.15 GeV Kr-86(26+) ions as the exposure source and hydrogen silsesquioxane (HSQ) as a negative-tone inorganic resist, ultrahigh-aspect-ratio nanofilaments with sub-5 nm feature size, following the trajectory of single heavy ions, were reliably obtained. Control experiments and simulation analysis indicate that the high-resolution capabilities of both HSQ resist and the heavy ions contribute the sub-5 nm fabrication result. Our work on the one hand provides a robust evidence that single heavy ions have the potential for single-digit nanometer lithography and on the other hand proves the capability of inorganic resists for reliable sub-5 nm patterning. Along with the further development of heavy-ion technology, their ultimate patterning resolution is supposed to be more accessible for device prototyping and resist evaluation at the single-digit nanometer scale. |
资助项目 | National Natural Science Foundation of China (NSFC)[U1632271] ; National Natural Science Foundation of China (NSFC)[51722503] ; National Natural Science Foundation of China (NSFC)[U1930114] ; National Natural Science Foundation of China (NSFC)[11975283] ; National Natural Science Foundation of China (NSFC)[51805160] |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
语种 | 英语 |
出版者 | AMER CHEMICAL SOC |
WOS记录号 | WOS:000634766600007 |
资助机构 | National Natural Science Foundation of China (NSFC) |
内容类型 | 期刊论文 |
源URL | [http://119.78.100.186/handle/113462/137662] |
专题 | 中国科学院近代物理研究所 |
通讯作者 | Du, Guanghua; Duan, Huigao |
作者单位 | 1.Hunan Univ, Coll Mech & Vehicle Engn, State Key Lab Adv Design & Mfg Vehicle Body, Natl Engn Res Ctr High Efficiency Grinding, Changsha 410082, Hunan, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
推荐引用方式 GB/T 7714 | Liu, Qing,Zhao, Jing,Guo, Jinlong,et al. Sub-5 nm Lithography with Single GeV Heavy Ions Using Inorganic Resist[J]. NANO LETTERS,2021,21(6):2390-2396. |
APA | Liu, Qing.,Zhao, Jing.,Guo, Jinlong.,Wu, Ruqun.,Liu, Wenjing.,...&Duan, Huigao.(2021).Sub-5 nm Lithography with Single GeV Heavy Ions Using Inorganic Resist.NANO LETTERS,21(6),2390-2396. |
MLA | Liu, Qing,et al."Sub-5 nm Lithography with Single GeV Heavy Ions Using Inorganic Resist".NANO LETTERS 21.6(2021):2390-2396. |
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