High-pressure synthesis, growth and characterization of large-size BaGa4Se7 crystals

doi:10.1016/j.jcrysgro.2021.126405

	High-pressure synthesis, growth and characterization of large-size BaGa4Se7 crystals
	Li, Chunxiao 1,2,3; Li, Zhuang 1,2,3; Sun, Mengran 1,2,3; Huang, Changbao 4; Yao, Jiyong 1,2
刊名	JOURNAL OF CRYSTAL GROWTH
	2022
卷号	577
关键词	A2. Bridgman technique A2. Single crystal growth B2. Nonlinear optic materials
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2021.126405
通讯作者	Yao, Jiyong(jyao@mail.ipc.ac.cn)
英文摘要	BaGa4Se7 (BGSe), as a promising new infrared nonlinear optical (IR NLO) crystal, has been widely studied in recent years due to its outstanding overall properties and IR laser output performance. In this paper, the synthesis method of polycrystalline sample and the temperature field used in crystal growth of BGSe were improved. More than 200 g BGSe polycrystalline sample can be synthesized by high pressure synthesis in just 2 days. The crystal growth temperature field can be designed with the use of COMSOL Multiphysics (TM) simulation software, and the experimental results fit well with the simulation results. A high-quality crystal with dimensions up to Phi 40 mm x 180 mm was grown successfully by the Bridgman-Stockbarger method. The surface laser damage threshold was measured to be 7.075 J/cm(2) (peak on-axial fluence) using a 1.064 mu m laser under conditions of 5 ns pulse width, 1 Hz frequency, and 0.12 mm spot size. The absorption coefficient was 0.017 cm(-1)@4 mu m for an uncoated sample.
资助项目	National Natural Science Foundation of China[51890862]
WOS关键词	INDUCED DAMAGE THRESHOLD ; NONLINEAR CRYSTALS ; SINGLE-CRYSTALS ; HIGH-POWER ; ZNGEP2 ; BAGA2GESE6
WOS研究方向	Crystallography ; Materials Science ; Physics
语种	英语
出版者	ELSEVIER
WOS记录号	WOS:000718377900005
资助机构	National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/126676]
专题	中国科学院合肥物质科学研究院
通讯作者	Yao, Jiyong
作者单位	1.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Beijing Ctr Crystal Res & Dev, Tech Inst Phys & Chem, Key Lab Funct Crystals & Laser Technol, Beijing 100190, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Anhui Prov Key Lab Photon Devices & Mat, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Li, Chunxiao,Li, Zhuang,Sun, Mengran,et al. High-pressure synthesis, growth and characterization of large-size BaGa4Se7 crystals[J]. JOURNAL OF CRYSTAL GROWTH,2022,577.
APA	Li, Chunxiao,Li, Zhuang,Sun, Mengran,Huang, Changbao,&Yao, Jiyong.(2022).High-pressure synthesis, growth and characterization of large-size BaGa4Se7 crystals.JOURNAL OF CRYSTAL GROWTH,577.
MLA	Li, Chunxiao,et al."High-pressure synthesis, growth and characterization of large-size BaGa4Se7 crystals".JOURNAL OF CRYSTAL GROWTH 577(2022).