Thermal-induced interface degradation in perovskite light-emitting diodes

doi:10.1039/d0tc03816d

CORC > 上海应用物理研究所 > 中国科学院上海应用物理研究所 > 中科院上海应用物理研究所2011-2017年

	Thermal-induced interface degradation in perovskite light-emitting diodes
	Zou, YT ; Wu, T ; Fu, F ; Bai, S ; Cai, L ; Yuan, ZC ; Li, YJ ; Li, RY ; Xu, WD ; Song, T
刊名	JOURNAL OF MATERIALS CHEMISTRY C
	2020
卷号	8 期号:43 页码:15079-15085
关键词	ION MIGRATION EFFICIENCY
ISSN号	2050-7526
DOI	10.1039/d0tc03816d
文献子类	期刊论文
英文摘要	Perovskite light-emitting diodes (PeLEDs) have experienced rapid improvements in device efficiency during the last several years. However, the operational instability of PeLEDs remains a key barrier hindering their practical applications. A fundamental understanding of the degradation mechanism is still lacking but will be important to seek ways to mitigate these unwanted processes. In this work, through comprehensive characterizations of the perovskite emitters and the interfacial contacts, we figure out that Joule heating induced interface degradation is one of the dominant factors affecting the operational stability of PeLEDs. We investigate the interfacial contacts of PeLEDs based on a commonly used device structure, with an organic electron transport layer of 1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene (TPBi), and observe obvious photoluminescence quenching of the perovskite layer after device operation. Detailed characterizations of the interlayers and the interfacial contacts reveal that photoluminescence quenching is mainly due to the element inter-diffusion at the interface induced by the morphological evolution of the TPBi layers under Joule heating during the operation of PeLEDs. Our work provides direct insights into the degradation pathways and highlights the importance of exploring intrinsically stable interlayers as well as interfacial contacts beyond the state-of-the-art to further boost the operational stability of PeLEDs.
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/33208]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位	1.Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, 199 Renai Rd, Suzhou 215123, Peoples R China 2.Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden 3.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil SSRF, 239 Zhangheng Rd, Shanghai 201204, Peoples R China 4.Empa Swiss Fed Labs Mat Sci & Technol, Lab Thin Films & Photovolta, Ueberlandstr 129, CH-8600 Dubendorf, Switzerland 5.Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, 199 Renai Rd, Suzhou 215123, Peoples R China
推荐引用方式 GB/T 7714	Zou, YT,Wu, T,Fu, F,et al. Thermal-induced interface degradation in perovskite light-emitting diodes[J]. JOURNAL OF MATERIALS CHEMISTRY C,2020,8(43):15079-15085.
APA	Zou, YT.,Wu, T.,Fu, F.,Bai, S.,Cai, L.,...&Sun, BQ.(2020).Thermal-induced interface degradation in perovskite light-emitting diodes.JOURNAL OF MATERIALS CHEMISTRY C,8(43),15079-15085.
MLA	Zou, YT,et al."Thermal-induced interface degradation in perovskite light-emitting diodes".JOURNAL OF MATERIALS CHEMISTRY C 8.43(2020):15079-15085.