Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS2-Related Layered Materials | |
Wen, Chenhaoping2; Gao, Jingjing1,3; Xie, Yuan2; Zhang, Qing2; Kong, Pengfei2; Wang, Jinghui2,4; Jiang, Yilan2; Luo, Xuan3; Li, Jun2,4; Lu, Wenjian3 | |
刊名 | PHYSICAL REVIEW LETTERS |
2021-06-23 | |
卷号 | 126 |
ISSN号 | 0031-9007 |
DOI | 10.1103/PhysRevLett.126.256402 |
通讯作者 | Sun, Yu-Ping(ypsun@issp.ac.cn) ; Yan, Shichao(yanshch@shanghaitech.edu.cn) |
英文摘要 | Here we use low-temperature scanning tunneling microscopy and spectroscopy to reveal the roles of the narrow electronic band in two 1T-TaS2-related materials (bulk 1T-TaS2 and 4H(b)-TaS2). 4H(b)-TaS, is a superconducting compound with alternating 1T-TaS2 and 1H-TaS2 layers, where the 1H-TaS2 layer has a weak charge density wave (CDW) pattern and reduces the CDW coupling between the adjacent 1T-TaS2 layers. In the 1T-TaS2 layer of 4H(b)-TaS2, we observe a narrow electronic band located near the Fermi level, and its spatial distribution is consistent with the tight-binding calculations for two-dimensional 1T-TaS2 layers. The weak electronic hybridization between the 1T-TaS2 and 1H-TaS2 layers in 4H(b)-TaS2 shifts the narrow electronic band to be slightly above the Fermi level, which suppresses the electronic correlation-induced band splitting. In contrast, in bulk 1T-TaS2, there is an interlayer CDW coupling-induced insulating gap. In comparison with the spatial distributions of the electronic states in bulk 1T-TaS2 and 4H(b)-TaS2, the insulating gap in bulk 1T-TaS2 results from the formation of a bonding band and an antibonding band due to the overlap of the narrow electronic bands in the dimerized 1T-TaS2 layers. |
资助项目 | Science and Technology Commission of Shanghai Municipality (STCSM)[18QA1403100] ; National Science Foundation of China[61771234] ; National Science Foundation of China[11874042] ; Shanghai Tech University ; National Key Research and Development Program[2016YFA0300404] ; National Nature Science Foundation of China[11674326] ; National Nature Science Foundation of China[11774351] ; National Natural Science Foundation of China[U1832141] ; National Natural Science Foundation of China[U1932217] ; National Natural Science Foundation of China[U2032215] ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U1832141] ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U1932217] ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U2032215] ; Center for High-resolution Electron Microscopy (ChEM)[EM-19430216] |
WOS关键词 | MOTT-INSULATING STATE ; CHARGE-DENSITY WAVES ; TRANSITION ; ORDER |
WOS研究方向 | Physics |
语种 | 英语 |
出版者 | AMER PHYSICAL SOC |
WOS记录号 | WOS:000665775100009 |
资助机构 | Science and Technology Commission of Shanghai Municipality (STCSM) ; National Science Foundation of China ; Shanghai Tech University ; National Key Research and Development Program ; National Nature Science Foundation of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences' Large-Scale Scientific Facility ; Center for High-resolution Electron Microscopy (ChEM) |
内容类型 | 期刊论文 |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/123355] |
专题 | 中国科学院合肥物质科学研究院 |
通讯作者 | Sun, Yu-Ping; Yan, Shichao |
作者单位 | 1.Univ Sci & Technol China, Hefei 230026, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 4.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China 5.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China 6.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China |
推荐引用方式 GB/T 7714 | Wen, Chenhaoping,Gao, Jingjing,Xie, Yuan,et al. Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS2-Related Layered Materials[J]. PHYSICAL REVIEW LETTERS,2021,126. |
APA | Wen, Chenhaoping.,Gao, Jingjing.,Xie, Yuan.,Zhang, Qing.,Kong, Pengfei.,...&Yan, Shichao.(2021).Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS2-Related Layered Materials.PHYSICAL REVIEW LETTERS,126. |
MLA | Wen, Chenhaoping,et al."Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS2-Related Layered Materials".PHYSICAL REVIEW LETTERS 126(2021). |
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