Enhancement of photodetection by PbSe quantum dots on atomic-layered GeS devices

doi:10.1088/1361-6463/abb102

	Enhancement of photodetection by PbSe quantum dots on atomic-layered GeS devices
	Li, Yuzhi 1,2; Shi, Xuan 1; Dai, Fangbo 1; Zhou, Dahua 1; Jin, Minghui 1; Zheng, Hongying 1; Yang, Yuhui 1; Zhao, Hongquan 1; Wang, Junzhong 2
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2020-12-09
卷号	53 期号:50 页码:9
关键词	hybrid-structure atomic-layered GeS film PbSe quantum dots photoresponsivity carrier mobility
ISSN号	0022-3727
DOI	10.1088/1361-6463/abb102
通讯作者	Zhao, Hongquan(hqzhao@cigit.ac.cn)
英文摘要	Hybrid structures of quantum dots (QDs) on two-dimensional materials have aroused great interest because of their high absorbance properties and tunable wavelength detection ranges. In this work, 1.44 times the photoresponse bandwidth of PbSe QDs on atomic-layered GeS hybrid structure devices is achieved compared with pure GeS devices due to the transfer of photogenerated carriers between the PbSe QDs and the GeS film. A doubling of the peak photoresponsivity is obtained at a wavelength of 635 nm, and the detectivity of the hybrid devices increases by 39.5 and 27.4 times under 808 and 980 nm illumination, respectively. Additionally, tripling of the carrier mobility is measured in the hybrid devices (165.2 cm(2)V(-1)s(-1)) compared with that of pure atomic-layered GeS devices (54.2 cm(2)V(-1)s(-1)). The concentration of PbSe QDs on the GeS films is optimized for the highest photoresponsivity and carrier mobility of the hybrid devices. The results indicate that a hybrid structure of QDs on atomic-layered materials is a promising way to enhance photodetection.
资助项目	National Natural Science Foundation of China[61775214] ; National Natural Science Foundation of China[61601433] ; CAS 'Light of West China' Programs ; Natural Science Foundation of Chongqing, China[cstc2019jcyj-zdxmX0003] ; Natural Science Foundation of Chongqing, China[cstc2019jcyj-msxmX0387]
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000576350000001
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/11862]
专题	中国科学院重庆绿色智能技术研究院
通讯作者	Zhao, Hongquan
作者单位	1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China 2.Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
推荐引用方式 GB/T 7714	Li, Yuzhi,Shi, Xuan,Dai, Fangbo,et al. Enhancement of photodetection by PbSe quantum dots on atomic-layered GeS devices[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2020,53(50):9.
APA	Li, Yuzhi.,Shi, Xuan.,Dai, Fangbo.,Zhou, Dahua.,Jin, Minghui.,...&Wang, Junzhong.(2020).Enhancement of photodetection by PbSe quantum dots on atomic-layered GeS devices.JOURNAL OF PHYSICS D-APPLIED PHYSICS,53(50),9.
MLA	Li, Yuzhi,et al."Enhancement of photodetection by PbSe quantum dots on atomic-layered GeS devices".JOURNAL OF PHYSICS D-APPLIED PHYSICS 53.50(2020):9.