Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC

	Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC
	Zhang, Feng ; Sun, Guosheng ; Zeng, Yiping
刊名	journal of applied physics
	2013
卷号	113 期号:4 页码:044112
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2013-09-22
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24394]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Zhang, Feng,Sun, Guosheng,Zeng, Yiping. Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC[J]. journal of applied physics,2013,113(4):044112.
APA	Zhang, Feng,Sun, Guosheng,&Zeng, Yiping.(2013).Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC.journal of applied physics,113(4),044112.
MLA	Zhang, Feng,et al."Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC".journal of applied physics 113.4(2013):044112.