Opening of Band Gap of Graphene with High Electronic Mobility by Codoping BN Pairs

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	Opening of Band Gap of Graphene with High Electronic Mobility by Codoping BN Pairs
	REN Xiangyang 5; XIA Sha 5; ZHANG Zhiguo 4; MENG Xing 3; YU Hongmei 2; WU Qi 2; ZHANG Wenyi 1; LI Aiwu 5; YANG Han 5
刊名	高等学校化学研究:英文版
	2019
卷号	35.0 期号:006 页码:1058-1061
关键词	First-principle calculation Doping Optoeletronic property Mobility
ISSN号	1005-9040
英文摘要	Two-dimensional(2D)materials with a high density and low power consumption have become the most popular candidates for next-generation semiconductor electronic devices.As a prototype 2D material,graphene has attracted much attention owing to its stability and ultrahigh mobility.However,zero band gap of graphene leads to very low on-off ratios and thus limits its applications in electronic devices,such as transistors.Although some new 2D materials and doped graphene have nonzero band gaps,the electronic mobility is sacrificed.In this study,to open the band gap of graphene with high electronic mobility,the structure and property of BN-doped graphene were evaluated using first-principles calculations.The formation energies indicate that the six-membered BN rings doped graphene has the most favorable configuration.The band structures show that the band gaps can be opened by such type of doping.Also,the Dirac-cone-like band dispersion of graphene is mostly inhibited,ensuring high electronic mobility.Therefore,codoping BN into graphene might provide 2D materials with nonzero band gaps and high electronic mobility.
资助项目	[National Key Research and Development Program of China] ; [National Natural Science Foundation of China] ; [Fund of the High-performance Computing Center(HPCC) of Jilin University, China]
语种	中文
CSCD记录号	CSCD:6626723
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/153196]
专题	金属研究所_中国科学院金属研究所
作者单位	1.Systems Engineering Research Institute,P.R.China 2.College of Computer Science and Technology,Jilin University,P.R.China 3.College of Physics,Jilin University,P.R.China 4.中国科学院金属研究所 5.State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,P.R.China
推荐引用方式 GB/T 7714	REN Xiangyang,XIA Sha,ZHANG Zhiguo,et al. Opening of Band Gap of Graphene with High Electronic Mobility by Codoping BN Pairs[J]. 高等学校化学研究:英文版,2019,35.0(006):1058-1061.
APA	REN Xiangyang.,XIA Sha.,ZHANG Zhiguo.,MENG Xing.,YU Hongmei.,...&YANG Han.(2019).Opening of Band Gap of Graphene with High Electronic Mobility by Codoping BN Pairs.高等学校化学研究:英文版,35.0(006),1058-1061.
MLA	REN Xiangyang,et al."Opening of Band Gap of Graphene with High Electronic Mobility by Codoping BN Pairs".高等学校化学研究:英文版 35.0.006(2019):1058-1061.