Excitonic optical absorption in semiconductors under intense terahertz radiation

CORC > 西安光学精密机械研究所 > 中国科学院西安光学精密机械研究所 > 瞬态光学技术国家重点实验室

	Excitonic optical absorption in semiconductors under intense terahertz radiation
	Zhang Tong-Yi; Zhao Wei
刊名	chinese physics b
	2008-11-01
卷号	17 期号:11 页码:4285-4291
关键词	exciton optical absorption terahertz radiation dynamical Franz-Keldysh effect
ISSN号	1674-1056
合作状况	其它
英文摘要	the excitonic optical absorption of gaas bulk semiconductors under intense terahertz (thz) radiation is investigated numerically. the method of solving initial-value problems, combined with the perfect matched layer technique, is used to calculate the optical susceptibility. in the presence of a driving thz field, in addition to the usual exciton peaks, 2p replica of the dark 2p exciton and even-thz-photon-sidebands of the main exciton resonance emerge in the continuum above the band edge and below the main exciton resonance. moreover, to understand the shift of the position of the main exciton peak under intense thz radiation, it is necessary to take into consideration both the dynamical franz-keldysh effect and ac stark effect simultaneously. for moderate frequency fields, the main exciton peak decreases and broadens due to the field-induced ionization of the excitons with thz field increasing. however, for high frequency thz fields, the characteristics of the exciton recur even under very strong thz fields, which accords with the recent experimental results qualitatively.
学科主题	数理科学和化学
WOS标题词	science & technology ; physical sciences
类目[WOS]	physics, multidisciplinary
研究领域[WOS]	physics
关键词[WOS]	quantum-well structures ; numerical-calculation ; magnetic-field ; electric-field ; band-gap ; electroabsorption ; magnetoexcitons ; edge
收录类别	SCI ; EI
资助信息	∗project supported by the national natural science foundation of china (grant no 60777017), the national basic research
语种	英语
WOS记录号	WOS:000261206700054
公开日期	2010-01-13
内容类型	期刊论文
源URL	[http://ir.opt.ac.cn/handle/181661/7975]
专题	西安光学精密机械研究所_瞬态光学技术国家重点实验室
作者单位	Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710119, Peoples R China
推荐引用方式 GB/T 7714	Zhang Tong-Yi,Zhao Wei. Excitonic optical absorption in semiconductors under intense terahertz radiation[J]. chinese physics b,2008,17(11):4285-4291.
APA	Zhang Tong-Yi,&Zhao Wei.(2008).Excitonic optical absorption in semiconductors under intense terahertz radiation.chinese physics b,17(11),4285-4291.
MLA	Zhang Tong-Yi,et al."Excitonic optical absorption in semiconductors under intense terahertz radiation".chinese physics b 17.11(2008):4285-4291.