Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping

doi:10.1002/adfm.202006941

CORC > 金属研究所 > 中国科学院金属研究所

	Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping
	Tang, Lei 1,3; Xu, Runzhang 1,3; Tan, Junyang 1,3; Luo, Yuting 1,3; Zou, Jingyun 1,3; Zhang, Zongteng 4; Zhang, Rongjie 1,3; Zhao, Yue 4; Lin, Junhao 4; Zou, Xiaolong 1,3
刊名	ADVANCED FUNCTIONAL MATERIALS
	2020-10-27
页码	7
关键词	2D materials bandgap doping electronic structure TMDCs
ISSN号	1616-301X
DOI	10.1002/adfm.202006941
通讯作者	Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn)
英文摘要	Modulating electronic structure of monolayer transition metal dichalcogenides (TMDCs) is important for many applications, and doping is an effective way toward this goal, yet is challenging to control. Here, the in situ substitutional doping of niobium (Nb) into TMDCs with tunable concentrations during chemical vapor deposition is reported. Taking monolayer WS2 as an example, doping Nb into its lattice leads to bandgap changes in the range of 1.98-1.65 eV. Noteworthy, electrical transport measurements and density functional theory calculations show that the 4d electron orbitals of the Nb dopants contribute to the density of states of Nb-doped WS2 around the Fermi level, resulting in an n- to p-type conversion. Nb-doping also reduces the energy barrier of hydrogen absorption in WS2, leading to an improved electrocatalytic hydrogen evolution performance. These results highlight the effectiveness of controlled doping in modulating the electronic structure of TMDCs and their use in electronic related applications.
资助项目	National Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51991343] ; Youth 1000-Talent Program of China ; National Key RD Program[2018YFA0307200] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project[201901171523]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	WILEY-V C H VERLAG GMBH
WOS记录号	WOS:000583866700001
资助机构	National Natural Science Foundation of China ; Youth 1000-Talent Program of China ; National Key RD Program ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/141191]
专题	金属研究所_中国科学院金属研究所
通讯作者	Liu, Bilu; Cheng, Hui-Ming
作者单位	1.Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China 4.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Tang, Lei,Xu, Runzhang,Tan, Junyang,et al. Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping[J]. ADVANCED FUNCTIONAL MATERIALS,2020:7.
APA	Tang, Lei.,Xu, Runzhang.,Tan, Junyang.,Luo, Yuting.,Zou, Jingyun.,...&Cheng, Hui-Ming.(2020).Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping.ADVANCED FUNCTIONAL MATERIALS,7.
MLA	Tang, Lei,et al."Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping".ADVANCED FUNCTIONAL MATERIALS (2020):7.