Light-induced irreversible structural phase transition in trilayer graphene

doi:10.1038/s41377-020-00412-6

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	Light-induced irreversible structural phase transition in trilayer graphene
	Zhang, Jianyu 10; Han, Jinsen 10; Peng, Gang 10; Yang, Xi 7; Yuan, Xiaoming 8; Li, Yongjun 9; Chen, Jianing 1,4,11; Xu, Wei 7; Liu, Ken 7; Zhu, Zhihong 7
刊名	LIGHT-SCIENCE & APPLICATIONS
	2020-10-13
卷号	9 期号:1 页码:11
ISSN号	2047-7538
DOI	10.1038/s41377-020-00412-6
通讯作者	Dai, Jiayu(jydai@nudt.edu.cn) ; Zhu, Mengjian(zhumengjian11@nudt.edu.cn)
英文摘要	Laser on trilayer graphene: stack switch with a difference Heat from a laser changes how atoms stack up within trilayer graphene, providing a simple and effective approach for fabricating new materials with interesting optical and electronic properties. Mengjian Zhu of China's National University of Defense Technology and colleagues used laser light to switch regions within trilayer graphene from one type of atomic layering to another. This is interesting, as the properties of trilayer graphene vary depending on how its atoms are stacked up. Zhu and his colleagues found that heat from the laser manipulated the dividing walls separating differently stacked atomic regions within the graphene flakes. This led to a gradual switch from one type of atomic stacking to another, changing the graphene's properties. The finding could lead to applications for optical storage media and photonic devices. A crystal structure has a profound influence on the physical properties of the corresponding material. By synthesizing crystals with particular symmetries, one can strongly tune their properties, even for the same chemical configuration (compare graphite and diamond, for instance). Even more interesting opportunities arise when the structural phases of crystals can be changed dynamically through external stimulations. Such abilities, though rare, lead to a number of exciting phenomena, such as phase-change memory effects. In the case of trilayer graphene, there are two common stacking configurations (ABA and ABC) that have distinct electronic band structures and exhibit very different behaviors. Domain walls exist in the trilayer graphene with both stacking orders, showing fascinating new physics such as the quantum valley Hall effect. Extensive efforts have been dedicated to the phase engineering of trilayer graphene. However, the manipulation of domain walls to achieve precise control of local structures and properties remains a considerable challenge. Here, we experimentally demonstrate that we can switch from one structural phase to another by laser irradiation, creating domains of different shapes in trilayer graphene. The ability to control the position and orientation of the domain walls leads to fine control of the local structural phases and properties of graphene, offering a simple but effective approach to create artificial two-dimensional materials with designed atomic structures and electronic and optical properties.
资助项目	National Key R&D Program of China[2018YFA0306900] ; National Key R&D Program of China[2017YFA0403200] ; National Natural Science Foundation of China[11804386] ; National Natural Science Foundation of China[11774429] ; National Natural Science Foundation of China[11874407] ; NSAF[U1830206] ; National Key Research and Development Program of China[2016YFA0203500] ; Strategic Priority Research Program of Chinese Academy of Science[XDB 30000000]
WOS研究方向	Optics
语种	英语
出版者	SPRINGERNATURE
WOS记录号	WOS:000579306000001
资助机构	National Key R&D Program of China ; National Natural Science Foundation of China ; NSAF ; National Key Research and Development Program of China ; Strategic Priority Research Program of Chinese Academy of Science
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/141102]
专题	金属研究所_中国科学院金属研究所
通讯作者	Dai, Jiayu; Zhu, Mengjian
作者单位	1.Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China 2.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China 4.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China 5.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China 6.Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore 7.Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Peoples R China 8.Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China 9.Quantum Design China Beijing Co Ltd, Beijing 100015, Peoples R China 10.Natl Univ Def Technol, Dept Phys, Changsha 410073, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Jianyu,Han, Jinsen,Peng, Gang,et al. Light-induced irreversible structural phase transition in trilayer graphene[J]. LIGHT-SCIENCE & APPLICATIONS,2020,9(1):11.
APA	Zhang, Jianyu.,Han, Jinsen.,Peng, Gang.,Yang, Xi.,Yuan, Xiaoming.,...&Novoselov, Kostya S..(2020).Light-induced irreversible structural phase transition in trilayer graphene.LIGHT-SCIENCE & APPLICATIONS,9(1),11.
MLA	Zhang, Jianyu,et al."Light-induced irreversible structural phase transition in trilayer graphene".LIGHT-SCIENCE & APPLICATIONS 9.1(2020):11.