Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides

doi:10.1021/acsnano.0c00296

CORC > 金属研究所 > 中国科学院金属研究所

	Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides
	Tang, Lei 1,2; Li, Tao 4; Luo, Yuting 1,2; Feng, Simin 1,2; Cai, Zhengyang 1,2; Zhang, Hang 4; Liu, Bilu 1,2; Cheng, Hui-Ming 1,2,3
刊名	ACS NANO
	2020-04-28
卷号	14 期号:4 页码:4646-4653
关键词	two-dimensional materials TMDCs gaseous sources VCVD uniformity heterostructures
ISSN号	1936-0851
DOI	10.1021/acsnano.0c00296
通讯作者	Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn)
英文摘要	Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted great attention due to their physical and chemical properties that make them promising in electronics and optoelectronics. Because of the difficulties in controlling concentrations of solid precursors and spatially nonuniform growth dynamics, it is challenging to grow 2D TMDCs over large areas with good uniformity and reproducibility so far, which significantly hinders their practical use. Here we report a vertical chemical vapor deposition (VCVD) design with gaseous precursors to grow monolayer TMDCs with a uniform density and high quality over the whole substrate and with excellent reproducibility. Such a gaseous VCVD design can well control the three key parameters in TMDC growth, including precursor concentration, gas flow, and temperature, which cannot be done in a currently widely used horizontal CVD system with solid precursors. Statistical results show that VCVD-grown monolayer TMDCs including MoS2 and WS2 are of high uniformity and quality on substrates over centimeter size. We also fabricated multiple van der Waals heterostructures by one-step transfer of VCVD-grown TMDCs, owning to their good uniformity. This work sheds light on the growth of 2D materials with high uniformity on a large-area substrate, which can be used for the wafer-scale fabrication of 2D materials and their heterostructures.
资助项目	National Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51991343] ; National Natural Science Foundation of China[51888103] ; National Key RD Program[2018YFA0307200] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project[201901171523] ; Development and Reform Commission of Shenzhen Municipality for the development of the Low-Dimensional Materials and Devices discipline ; Chinese Academy of Science Pioneer Hundred Talents Program
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000529895500084
资助机构	National Natural Science Foundation of China ; National Key RD Program ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project ; Development and Reform Commission of Shenzhen Municipality for the development of the Low-Dimensional Materials and Devices discipline ; Chinese Academy of Science Pioneer Hundred Talents Program
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/138650]
专题	金属研究所_中国科学院金属研究所
通讯作者	Liu, Bilu; Cheng, Hui-Ming
作者单位	1.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Guangdong, Peoples R China 2.Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Guangdong, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 4.Chinese Acad Sci, Inst Engn Thermophys, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Tang, Lei,Li, Tao,Luo, Yuting,et al. Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides[J]. ACS NANO,2020,14(4):4646-4653.
APA	Tang, Lei.,Li, Tao.,Luo, Yuting.,Feng, Simin.,Cai, Zhengyang.,...&Cheng, Hui-Ming.(2020).Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides.ACS NANO,14(4),4646-4653.
MLA	Tang, Lei,et al."Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides".ACS NANO 14.4(2020):4646-4653.