Overcoming the Limits of the Interfacial Dzyaloshinskii-Moriya Interaction by Antiferromagnetic Order in Multiferroic Heterostructures

doi:10.1002/adma.201904415

CORC > 金属研究所 > 中国科学院金属研究所

	Overcoming the Limits of the Interfacial Dzyaloshinskii-Moriya Interaction by Antiferromagnetic Order in Multiferroic Heterostructures
	Wang, Han 5; Dai, Yingying 2; Liu, Zhongran 3; Xie, Qidong 5; Liu, Chao 5; Lin, Weinan 5; Liu, Liang 5; Yang, Ping 4; Wang, John 5; Venkatesan, Thirumalai Venky 1,5
刊名	ADVANCED MATERIALS
	2020-02-24
页码	9
关键词	antiferromagnetic order interfacial Dzyaloshinskii-Moriya interaction magnetic topological states multiferroic heterostructures topological Hall effect
ISSN号	0935-9648
DOI	10.1002/adma.201904415
通讯作者	Chen, Jingsheng(msecj@nus.edu.sg)
英文摘要	Topologically protected magnetic states have a variety of potential applications in future spintronics owing to their nanoscale size (<100 nm) and unique dynamics. These fascinating states, however, usually are located at the interfaces or surfaces of ultrathin systems due to the short interaction range of the Dzyaloshinskii-Moriya interaction (DMI). Here, magnetic topological states in a 40-unit cells (16 nm) SrRuO3 layer are successfully created via an interlayer exchange coupling mechanism and the interfacial DMI. By controlling the thickness of an antiferromagnetic and ferromagnetic layer, interfacial ionic polarization, as well as the transformation between ferromagnetic and magnetic topological states, can be modulated. Using micromagnetic simulations, the formation and stability of robust magnetic skyrmions in SrRuO3/BiFeO3 heterostructures are elucidated. Magnetic skyrmions in thick multiferroic heterostructures are promising for the development of topological electronics as well as rendering a practical approach to extend the interfacial topological phenomena to bulk via antiferromagnetic order.
资助项目	Singapore National Research Foundation under CRP award[NRF-CRP10-2012-02] ; Singapore Ministry of Education[MOE2018-T2-1-019] ; Singapore Ministry of Education[MOE2018-T2-2-043] ; Singapore Ministry of Education[AMEIRG18-0022] ; A*STAR[IAF-ICP 11801E0036] ; MOE Tier 1[FY2018-P23] ; MOE Tier 1[R-284-000-196-114] ; National 973 Program of China[2015CB654901] ; National Natural Science Foundation of China[11234011] ; National Natural Science Foundation of China[51590883] ; National Natural Science Foundation of China[51701217]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	WILEY-V C H VERLAG GMBH
WOS记录号	WOS:000517310500001
资助机构	Singapore National Research Foundation under CRP award ; Singapore Ministry of Education ; A*STAR ; MOE Tier 1 ; National 973 Program of China ; National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/137590]
专题	金属研究所_中国科学院金属研究所
通讯作者	Chen, Jingsheng
作者单位	1.Natl Univ Singapore, NUSNNI Nanocore, Singapore 117411, Singapore 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Zhejiang Univ, Ctr Electron Microscope, State Key Lab Silicon Mat, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China 4.Natl Univ Singapore, SSLS, Singapore 117603, Singapore 5.Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore
推荐引用方式 GB/T 7714	Wang, Han,Dai, Yingying,Liu, Zhongran,et al. Overcoming the Limits of the Interfacial Dzyaloshinskii-Moriya Interaction by Antiferromagnetic Order in Multiferroic Heterostructures[J]. ADVANCED MATERIALS,2020:9.
APA	Wang, Han.,Dai, Yingying.,Liu, Zhongran.,Xie, Qidong.,Liu, Chao.,...&Chen, Jingsheng.(2020).Overcoming the Limits of the Interfacial Dzyaloshinskii-Moriya Interaction by Antiferromagnetic Order in Multiferroic Heterostructures.ADVANCED MATERIALS,9.
MLA	Wang, Han,et al."Overcoming the Limits of the Interfacial Dzyaloshinskii-Moriya Interaction by Antiferromagnetic Order in Multiferroic Heterostructures".ADVANCED MATERIALS (2020):9.