Gradient Sn-Doped Heteroepitaxial Film of Faceted Rutile TiO2 as an Electron Selective Layer for Efficient Perovskite Solar Cells

doi:10.1021/acsami.9b04308

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	Gradient Sn-Doped Heteroepitaxial Film of Faceted Rutile TiO2 as an Electron Selective Layer for Efficient Perovskite Solar Cells
	Wu, Tingting 5,6; Zhen, Chao 5; Zhu, Huaze 5,6; Wu, Jinbo 5,6; Jia, Chunxu 5,6; Wang, Lianzhou 1,2; Liu, Gang 5,6; Park, Nam-Gyu 4; Cheng, Hui-Ming 3,5
刊名	ACS APPLIED MATERIALS & INTERFACES
	2019-05-29
卷号	11 期号:21 页码:19638-19646
关键词	heteroepitaxial growth rutile TiO2 gradient Sn doping electron selective layer perovskite solar cell
ISSN号	1944-8244
DOI	10.1021/acsami.9b04308
通讯作者	Liu, Gang(gangliu@imr.ac.cn) ; Cheng, Hui-Ming(cheng@imr.ac.cn)
英文摘要	The high-efficiency photocarrier collection at the interfaces plays an important role in improving the performance of perovskite solar cells (PSCs) because the photocarrier effective diffusion lengths in the lead halide perovskite absorbers usually surpass the incident depths of light. Developing the electron selective layer (ESL) that has good interfaces with photoactive perovskite and current collector layer-like fluorine-doped tin oxide (FTO) is actively-5. pursued. Here, an unusual dense film of faceted rutile TiO2 single crystals with a gradient of the Sn4+ dopant grown heteroepitaxially on the FTO layer is obtained by a hydrothermal route and subsequent thermal treatment. Owing to the global features including low concentration of defects, atomically smooth coherent interface with FTO, and gradient doping-induced built-in electric field to promote the collection of photoelectrons in it, an optimal PSC with such a film as the ESL exhibits an efficiency of 17.2% with an open-circuit voltage of 1.1 V and fill factor of 76.1%, which are among the highest values of the PSCs with rutile TiO2 films as ESLs.
资助项目	National Natural Science Foundation of China[51825204] ; National Natural Science Foundation of China[51572266] ; National Natural Science Foundation of China[51629201] ; Key Research Program of Frontier Sciences CAS[QYZDB-SSW-JSC039]
WOS研究方向	Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000470034700082
资助机构	National Natural Science Foundation of China ; Key Research Program of Frontier Sciences CAS
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/133653]
专题	金属研究所_中国科学院金属研究所
通讯作者	Liu, Gang; Cheng, Hui-Ming
作者单位	1.Univ Queensland, Sch Chem Engn, Nanomat Ctr, Brisbane, Qld 4072, Australia 2.Univ Queensland, AIBN, Brisbane, Qld 4072, Australia 3.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, 1001 Xueyuan Rd, Shenzhen 518055, Peoples R China 4.Sungkyunkwan Univ, Sch Chem Engn, Suwon 440746, South Korea 5.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 6.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China
推荐引用方式 GB/T 7714	Wu, Tingting,Zhen, Chao,Zhu, Huaze,et al. Gradient Sn-Doped Heteroepitaxial Film of Faceted Rutile TiO2 as an Electron Selective Layer for Efficient Perovskite Solar Cells[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(21):19638-19646.
APA	Wu, Tingting.,Zhen, Chao.,Zhu, Huaze.,Wu, Jinbo.,Jia, Chunxu.,...&Cheng, Hui-Ming.(2019).Gradient Sn-Doped Heteroepitaxial Film of Faceted Rutile TiO2 as an Electron Selective Layer for Efficient Perovskite Solar Cells.ACS APPLIED MATERIALS & INTERFACES,11(21),19638-19646.
MLA	Wu, Tingting,et al."Gradient Sn-Doped Heteroepitaxial Film of Faceted Rutile TiO2 as an Electron Selective Layer for Efficient Perovskite Solar Cells".ACS APPLIED MATERIALS & INTERFACES 11.21(2019):19638-19646.