Gate tunable giant anisotropic resistance in ultra-thin GaTe

doi:10.1038/s41467-019-10256-3

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	Gate tunable giant anisotropic resistance in ultra-thin GaTe
	Wang, Hanwen 1,2; Chen, Mao-Lin 1,2; Zhu, Mengjian 3; Wang, Yaning 1,2; Dong, Baojuan 1,2; Sun, Xingdan 1,2; Zhang, Xiaorong 4,5; Cao, Shimin 6,7; Li, Xiaoxi 1,2; Huang, Jianqi 1,2
刊名	NATURE COMMUNICATIONS
	2019-05-24
卷号	10 页码:8
ISSN号	2041-1723
DOI	10.1038/s41467-019-10256-3
通讯作者	Yang, Teng(Yangteng@imr.ac.cn) ; Qin, Chengbing(hbqin@sxu.edu.cn) ; Chen, Jianhao(jhChen@oku.edu.cn) ; Han, Zheng()
英文摘要	Anisotropy in crystals arises from different lattice periodicity along different crystallographic directions, and is usually more pronounced in two dimensional (2D) materials. Indeed, in the emerging 2D materials, electrical anisotropy has been one of the recent research focuses. However, key understandings of the in-plane anisotropic resistance in low-symmetry 2D materials, as well as demonstrations of model devices taking advantage of it, have proven difficult. Here, we show that, in few-layered semiconducting GaTe, electrical conductivity anisotropy between x and y directions of the 2D crystal can be gate tuned from several fold to over 10(3). This effect is further demonstrated to yield an anisotropic non-volatile memory behavior in ultra-thin GaTe, when equipped with an architecture of van der Waals floating gate. Our findings of gate-tunable giant anisotropic resistance effect pave the way for potential applications in nanoelectronics such as multifunctional directional memories in the 2D limit.
资助项目	National Key R&D Program of China[2017YFA0304203] ; National Key R&D Program of China[2017YFA0206302] ; National Natural Science Foundation of China (NSFC)[11504385] ; National Natural Science Foundation of China (NSFC)[51627801] ; Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC ; CASC, China[U1537204] ; NSFC[51702146] ; Program of State Key Laboratory of Quantum Optics and Quantum Optics Devices[KF201816]
WOS研究方向	Science & Technology - Other Topics
语种	英语
出版者	NATURE PUBLISHING GROUP
WOS记录号	WOS:000468857900009
资助机构	National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC ; CASC, China ; NSFC ; Program of State Key Laboratory of Quantum Optics and Quantum Optics Devices
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/133479]
专题	金属研究所_中国科学院金属研究所
通讯作者	Yang, Teng; Qin, Chengbing; Chen, Jianhao; Han, Zheng
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China 3.Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Hunan, Peoples R China 4.Shanxi Univ, Inst Laser Spect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Shanxi, Peoples R China 5.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China 6.Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China 7.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China 8.Peking Univ, State Key Lab Mesoscop Phys, Beijing, Peoples R China 9.Peking Univ, Sch Phys, Beijing, Peoples R China 10.King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Adv Membranes & Porous Mat Ctr, Thuwal 239666900, Saudi Arabia
推荐引用方式 GB/T 7714	Wang, Hanwen,Chen, Mao-Lin,Zhu, Mengjian,et al. Gate tunable giant anisotropic resistance in ultra-thin GaTe[J]. NATURE COMMUNICATIONS,2019,10:8.
APA	Wang, Hanwen.,Chen, Mao-Lin.,Zhu, Mengjian.,Wang, Yaning.,Dong, Baojuan.,...&Zhang, Zhidong.(2019).Gate tunable giant anisotropic resistance in ultra-thin GaTe.NATURE COMMUNICATIONS,10,8.
MLA	Wang, Hanwen,et al."Gate tunable giant anisotropic resistance in ultra-thin GaTe".NATURE COMMUNICATIONS 10(2019):8.