Magnetic Field Modulated Weak Localization and Antilocalization State in Bi-2(TexSe1-x)(3) Films

doi:10.1002/pssb.201800272

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	Magnetic Field Modulated Weak Localization and Antilocalization State in Bi-2(TexSe1-x)(3) Films
	Wang, Zhenhua 1; Wei, Lingnan 1,3; Li, Mingze 1,3; Zhang, Zhidong 1; Gao, Xuan P. A.2
刊名	PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
	2018-12-01
卷号	255 期号:12 页码:8
关键词	Bi2Se3 localization magnetic-transport properties Te-doped films weak antilocalization
ISSN号	0370-1972
DOI	10.1002/pssb.201800272
通讯作者	Wang, Zhenhua(zhwang@imr.ac.cn)
英文摘要	The magneto-transport properties of a series of Bi-2(TexSe1-x)(3) films are investigated. It is seen that the doped samples develop an insulating behavior at low temperatures upon the increasing doping level as compared to the pristine sample Bi2Se3. The field evolution of the magneto-resistance (MR) under perpendicular and parallel magnetic fields for Bi-2(TexSe1-x)(3) films with x = 0, 0.1, 0.24, 0.4, and 0.6 at temperatures from 2 to 200 K is investigated. A low field cusp behavior appears in MR data of Bi-2(Te0.1Se0.9)(3) film, which is associated with the weak anti-localization (WAL). In Bi-2(Te0.4Se0.6)(3) films, MR with perpendicular and parallel magnetic fields shows signatures of WAL at low magnetic fields. A remarkable negative behavior, similar to weak localization (WL), under a high magnetic field parallel to the film surface is found which is dominated by bulk-state electrons. MR of Bi-2(Te0.6Se0.4)(3) film reveals a low-field WAL behavior and a high-field parabolic behavior, revealing a two-dimensional magneto-transport property.
资助项目	National Natural Science Foundation of China[51522104] ; National Natural Science Foundation of China[51331006] ; National Basic Research Program[2017YFA0206302] ; National Science Foundation[DMR-1151534]
WOS研究方向	Physics
语种	英语
出版者	WILEY-V C H VERLAG GMBH
WOS记录号	WOS:000453382600022
资助机构	National Natural Science Foundation of China ; National Basic Research Program ; National Science Foundation
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/130817]
专题	金属研究所_中国科学院金属研究所
通讯作者	Wang, Zhenhua
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 2.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China
推荐引用方式 GB/T 7714	Wang, Zhenhua,Wei, Lingnan,Li, Mingze,et al. Magnetic Field Modulated Weak Localization and Antilocalization State in Bi-2(TexSe1-x)(3) Films[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2018,255(12):8.
APA	Wang, Zhenhua,Wei, Lingnan,Li, Mingze,Zhang, Zhidong,&Gao, Xuan P. A..(2018).Magnetic Field Modulated Weak Localization and Antilocalization State in Bi-2(TexSe1-x)(3) Films.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,255(12),8.
MLA	Wang, Zhenhua,et al."Magnetic Field Modulated Weak Localization and Antilocalization State in Bi-2(TexSe1-x)(3) Films".PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 255.12(2018):8.