Cross-sectional observation on the indentation of [001] silicon

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	Cross-sectional observation on the indentation of [001] silicon
	Wu, YQ ; Shi, GY ; Xu, YB
刊名	JOURNAL OF MATERIALS RESEARCH
	1999-06-01
卷号	14 期号:6 页码:2399-2401
ISSN号	0884-2914
通讯作者	Wu, YQ()
英文摘要	A transmission electron microscope (TEM) micrograph of cross-sectionally viewed Vickers indentation made on the surface of (001) silicon at ambient temperature was obtained. The picture clearly reveals a triangle area, pointing downward and having nondiffraction-contrast, left after unloading, which further confirms the amorphized range induced by indentation in silicon, Analysis of the picture directly manifests a significant recovery of indentation depth. Surface shape and range of the amorphous silicon region do nor coincide with that of the indenter and the corresponding distribution pattern of hydrostatic stress beneath indentation predicted by elastoplastic theory, respectively. It seems that the amorphization could not be attributed to the result of hydrostatic stress alone.
WOS研究方向	Materials Science
语种	英语
出版者	MATERIALS RESEARCH SOCIETY
WOS记录号	WOS:000082550600029
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/109068]
专题	金属研究所_中国科学院金属研究所
通讯作者	Wu, YQ
作者单位	1.Chinese Acad Sci, State Key Lab Fatigue & Fracture Mat, Met Res Inst, Shenyang 110015, Peoples R China 2.Chinese Acad Sci, Atom Imaging Solids Lab, Met Res Inst, Shenyang 110015, Peoples R China 3.Liaoning Univ, Dept Elect Sci & Engn, Shenyang 110036, Peoples R China
推荐引用方式 GB/T 7714	Wu, YQ,Shi, GY,Xu, YB. Cross-sectional observation on the indentation of [001] silicon[J]. JOURNAL OF MATERIALS RESEARCH,1999,14(6):2399-2401.
APA	Wu, YQ,Shi, GY,&Xu, YB.(1999).Cross-sectional observation on the indentation of [001] silicon.JOURNAL OF MATERIALS RESEARCH,14(6),2399-2401.
MLA	Wu, YQ,et al."Cross-sectional observation on the indentation of [001] silicon".JOURNAL OF MATERIALS RESEARCH 14.6(1999):2399-2401.