Lateral photovoltage of B-doped ZnO thin films induced by 10.6 mu m CO2 laser

doi:10.1088/0022-3727/42/18/185101

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	Lateral photovoltage of B-doped ZnO thin films induced by 10.6 mu m CO2 laser
	Zhao, Songqing 2; Liu, Wenwei 2; Yang, Limin 2; Zhao, Kun 2,3; Liu, Hao 2; Zhou, Na 2; Wang, Aijun 2; Zhou, Yueliang 1; Zhou, Qingli 4; Shi, Yulei 4
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2009-09-21
卷号	42 期号:18 页码:4
ISSN号	0022-3727
DOI	10.1088/0022-3727/42/18/185101
通讯作者	Zhao, Songqing(zhaosongqing@yahoo.com.cn)
英文摘要	B-doped ZnO thin films were observed to have a lateral laser-induced photovoltaic effect: the saturation value varied very linearly with the 10.6 mu m constant laser spot position between the electrodes on the ZnO surface. It was found that the temperature gradient in the direction of electron transfer (along the film surface) due to the laser spot causes this photovoltage signal to be linearly dependent on the position of the laser spot in this isotropic system. This linearity is expected to make ZnO a candidate for position-sensitive photodetectors.
资助项目	National Natural Science Foundation of China[60877038] ; National Natural Science Foundation of China[50672132] ; National Natural Science Foundation of China[60778034] ; National Natural Science Foundation of China[10804077] ; Beijing Natural Science Foundation[4082026] ; programme for New Century Excellent Talents in University (NCET) ; Research Fund for the Doctoral Program of Higher Education
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000269557000022
资助机构	National Natural Science Foundation of China ; Beijing Natural Science Foundation ; programme for New Century Excellent Talents in University (NCET) ; Research Fund for the Doctoral Program of Higher Education
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/98179]
专题	金属研究所_中国科学院金属研究所
通讯作者	Zhao, Songqing
作者单位	1.Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China 2.China Univ Petr, Dept Math & Phys, Beijing 102249, Peoples R China 3.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China 4.Capital Normal Univ, Dept Phys, Key Lab Terahertz Optoelect, Beijing Key Lab Terahertz Spect & Imaging,Minist, Beijing 100048, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Songqing,Liu, Wenwei,Yang, Limin,et al. Lateral photovoltage of B-doped ZnO thin films induced by 10.6 mu m CO2 laser[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009,42(18):4.
APA	Zhao, Songqing.,Liu, Wenwei.,Yang, Limin.,Zhao, Kun.,Liu, Hao.,...&Shi, Yulei.(2009).Lateral photovoltage of B-doped ZnO thin films induced by 10.6 mu m CO2 laser.JOURNAL OF PHYSICS D-APPLIED PHYSICS,42(18),4.
MLA	Zhao, Songqing,et al."Lateral photovoltage of B-doped ZnO thin films induced by 10.6 mu m CO2 laser".JOURNAL OF PHYSICS D-APPLIED PHYSICS 42.18(2009):4.