Growth mechanisms of Cu3Sn on polycrystalline and single crystalline Cu substrates | |
Shang, P. J.1; Liu, Z. Q.1; Pang, X. Y.1; Li, D. X.1; Shang, J. K.1,2 | |
刊名 | ACTA MATERIALIA
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2009-09-01 | |
卷号 | 57期号:16页码:4697-4706 |
关键词 | Cu3Sn Growth mechanism Interface Soldering Transmission electron microscopy |
ISSN号 | 1359-6454 |
DOI | 10.1016/j.actamat.2009.06.025 |
通讯作者 | Liu, Z. Q.(zqliu@imr.ac.cn) |
英文摘要 | A comprehensive transmission electron microscopy (TEM) study was conducted to investigate the growth mechanisms Of Cu3Sn on polycrystalline and single crystalline Cu substrates in solder joints. On single crystalline Cu the solder reflow process resulted in the growth of columnar Cu3Sn grains aligned in a thin uniform layer perpendicular to the interface, while a thick Cu3Sn layer formed from fine equiaxed grains on the polycrystalline substrate. In the subsequent solid state aging, columnar growth Of Cu3Sn continued on the single crystalline Cu before it was replaced by nucleation and growth of new triangular Cu3Sn grains at the triple junction sites of the Cu/Cu3Sn interface. On the polycrystalline Cu the solid state aging caused much more rapid growth of the Cu3Sn layer due to nucleation and the growth of new Cu3Sn grains at both the Cu/Cu3Sn and Cu6Sn5/Cu3Sn interfaces. These different growth behaviors Of Cu3Sn were related to the diffusive supply of reactive elements. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
资助项目 | National Basic Research Program of China[2004CB619306] ; National Natural Science Foundation of China ; Chinese Academy of Sciences |
WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
语种 | 英语 |
出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
WOS记录号 | WOS:000270163900006 |
资助机构 | National Basic Research Program of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences |
内容类型 | 期刊论文 |
源URL | [http://ir.imr.ac.cn/handle/321006/96134] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
通讯作者 | Liu, Z. Q. |
作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA |
推荐引用方式 GB/T 7714 | Shang, P. J.,Liu, Z. Q.,Pang, X. Y.,et al. Growth mechanisms of Cu3Sn on polycrystalline and single crystalline Cu substrates[J]. ACTA MATERIALIA,2009,57(16):4697-4706. |
APA | Shang, P. J.,Liu, Z. Q.,Pang, X. Y.,Li, D. X.,&Shang, J. K..(2009).Growth mechanisms of Cu3Sn on polycrystalline and single crystalline Cu substrates.ACTA MATERIALIA,57(16),4697-4706. |
MLA | Shang, P. J.,et al."Growth mechanisms of Cu3Sn on polycrystalline and single crystalline Cu substrates".ACTA MATERIALIA 57.16(2009):4697-4706. |
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