Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations

CORC > 兰州化学物理研究所 > 中国科学院兰州化学物理研究所 > 固体润滑国家重点实验室

	Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations
	Naifeng Li 1; Yue Wang 1; Haifeng Sun 4; Junjie Hu 1; Maoyuan Zheng 1; Sihao Ye 1; Qi Wang 1; Yingtao Li 1; Deyan He 1; Jiatai Wang 3
刊名	Applied Physics Letters
	2020
卷号	6 期号:16 页码:063503
语种	英语
内容类型	期刊论文
源URL	[http://ir.licp.cn/handle/362003/26877]
专题	兰州化学物理研究所_固体润滑国家重点实验室
通讯作者	Jing Qi
作者单位	1.Key Laboratory of Special Function Materials and Structure Design, Ministry of Education, School of Physical Science and Technology, Lanzhou University 2.State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemicals Physics, Chinese Academy of Sciences 3.School of Physics and Electronic Information Engineering, Qinghai Normal University 4.Western Theater Army
推荐引用方式 GB/T 7714	Naifeng Li,Yue Wang,Haifeng Sun,et al. Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations[J]. Applied Physics Letters,2020,6(16):063503.
APA	Naifeng Li.,Yue Wang.,Haifeng Sun.,Junjie Hu.,Maoyuan Zheng.,...&Jing Qi.(2020).Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations.Applied Physics Letters,6(16),063503.
MLA	Naifeng Li,et al."Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations".Applied Physics Letters 6.16(2020):063503.