Broadband Optoelectronic Synaptic Thin-Film Transistors Based on Oxide Semiconductors

doi:10.1002/pssr.201900630

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2020专题

	Broadband Optoelectronic Synaptic Thin-Film Transistors Based on Oxide Semiconductors
	Duan, Hongxiao ; Javaid, Kashif ; Liang, Lingyan ; Huang, Lu ; Yu, Jiahuan ; Zhang, Hongliang ; Gao, Junhua ; Zhuge, Fei ; Chang, Ting-Chang ; Cao, Hongtao
刊名	PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
	2020
卷号	14 期号:4
关键词	PLASTICITY DEVICES BUDGET
DOI	10.1002/pssr.201900630
英文摘要	Optoelectronic synapse, well coupling the optical and electrical signals in one device, is an important building block in neuromorphic hardware library. Herein, optoelectronic synaptic devices are demonstrated based on a unique amorphous oxide semiconductor (InGaCdO [IGCO]) that can be spiked by broadband light signals from ultraviolet to near-infrared region, approaching the wavelength of 1000 nm. These optically stimulated synaptic devices are based on the conventional bottom-gate thin-film transistor (TFT) configuration, providing the beneficial process/structural compatibility with the flat-panel display industry. The IGCO TFTs, showing an ultrahigh field-effect mobility up to 106 cm(2) V-1 s(-1), can well simulate a series of basic synaptic functionalities via changing the pulse intensity, number, and frequency. The device plasticity originates from the dynamic ionization and neutralization of oxygen vacancy-related defects. Also, the mechanism underlying this dynamic process is discussed in detail, verifying that oxygen vacancy can turn to its ionized state by directly absorbing a photon having enough energy or with the aid of holes. The relatively higher carrier mobility, smaller bandgap, and larger activation energy of oxygen vacancy for the IGCO together facilitate the achievement of broadband optoelectronic synaptic devices.
学科主题	Materials Science ; Physics
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/20207]
专题	2020专题
作者单位	1.Liang, LY 2.Cao, HT (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Div Funct Mat & Nano Devices, Ningbo 315201, Peoples R China. 3.Cao, HT (corresponding author), Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China.
推荐引用方式 GB/T 7714	Duan, Hongxiao,Javaid, Kashif,Liang, Lingyan,et al. Broadband Optoelectronic Synaptic Thin-Film Transistors Based on Oxide Semiconductors[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2020,14(4).
APA	Duan, Hongxiao.,Javaid, Kashif.,Liang, Lingyan.,Huang, Lu.,Yu, Jiahuan.,...&Cao, Hongtao.(2020).Broadband Optoelectronic Synaptic Thin-Film Transistors Based on Oxide Semiconductors.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,14(4).
MLA	Duan, Hongxiao,et al."Broadband Optoelectronic Synaptic Thin-Film Transistors Based on Oxide Semiconductors".PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 14.4(2020).