The ideal doping concentration of silicon wafer for single junction hybrid n-Si /PEDOT: PSS solar cells with 3.2% elevated PCE and V-oc of 620 mV

doi:10.1007/s10854-020-03196-y

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	The ideal doping concentration of silicon wafer for single junction hybrid n-Si /PEDOT: PSS solar cells with 3.2% elevated PCE and V-oc of 620 mV
	Fang, Wenzhong ; Ni, Zitao ; Wang, Pan ; Xiang, Chaoyu ; Sun, Tao ; Zhang, Jing ; Wang, Rongfei ; Yang, Jie ; Yang, Yu
刊名	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
	2020
卷号	31 期号:8 页码:6398-6405
关键词	MICROREACTOR-ENCAPSULATION COPPER(II) COMPLEXES EFFICIENCY POLYMER ROUTE
DOI	10.1007/s10854-020-03196-y
英文摘要	Increasing the open circuit voltage of organic/Si-based hetero-junction solar cells (HSCs) is an efficient path for improving its photoelectric conversion efficiency (PCE). Commonly, increasing the doping concentration (N-D) for silicon planar substrate could enhance the open circuit voltage (V-oc). Comparing with other groups used 10(15) cm(-3) and other various doping level, the selected 10(17) cm(-3) doping concentration, as the ideal doping level, could enhance 100 mV for V-oc and maximum increase the PCE up to 12.54% without any additional antireflection (AR) layer deposition. To our knowledge, this obtained V-oc of 620 mV is a prominent reported value for n-Si/PEDOT: PSS solar devices without any additional antireflection (AR) layer deposition. Meanwhile, this research work clarifies that the PCE is inconsistently increased with the doping concentration, and 10(18) cm(-3) or higher doping concentration would import internal defects and reduce the PEC. This investigation of silicon wafer's optimal doping level paves a utility way for easily enhancing the efficiency of industrialized Si/PEDOT: PSS solar cells with low-cost fabrication technologies.
学科主题	Engineering ; Materials Science ; Physics
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/19868]
专题	2020专题
作者单位	1.Yang, Y (corresponding author), Yunnan Univ, Sch Energy, Int Joint Res Ctr Optoelect & Energy Mat, Kunming 650091, Yunnan, Peoples R China. 2.Sun, T
推荐引用方式 GB/T 7714	Fang, Wenzhong,Ni, Zitao,Wang, Pan,et al. The ideal doping concentration of silicon wafer for single junction hybrid n-Si /PEDOT: PSS solar cells with 3.2% elevated PCE and V-oc of 620 mV[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2020,31(8):6398-6405.
APA	Fang, Wenzhong.,Ni, Zitao.,Wang, Pan.,Xiang, Chaoyu.,Sun, Tao.,...&Yang, Yu.(2020).The ideal doping concentration of silicon wafer for single junction hybrid n-Si /PEDOT: PSS solar cells with 3.2% elevated PCE and V-oc of 620 mV.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,31(8),6398-6405.
MLA	Fang, Wenzhong,et al."The ideal doping concentration of silicon wafer for single junction hybrid n-Si /PEDOT: PSS solar cells with 3.2% elevated PCE and V-oc of 620 mV".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 31.8(2020):6398-6405.