Demonstration of ohmic contact using MoOx/Al on p-GaN and the proposal of a reflective electrode for AlGaN-based DUV-LEDs | |
Li, Liang; Cui, Mei; Shao, Hua; Dai, Yijun; Chen, Li; Zhang, Zi-Hui; Hoo, Jason; Guo, Sniping; Lan, Wen'an; Cao, Lili | |
刊名 | OPTICS LETTERS |
2020 | |
卷号 | 45期号:8页码:2427-2430 |
关键词 | DEEP-UV LEDS REALIZATION RESISTANCE GROWTH LAYER |
DOI | 10.1364/OL.387275 |
英文摘要 | The MoOx/Al electrode was designed and fabricated on p-GaN and sapphire with good ohmic behavior and decent deep ultraviolet (DUV) reflectivity, respectively. The influences of MoOx thickness and annealing condition on the electrical and optical behaviors of the MoOx/Al structure were investigated. Surface morphology of MoOx with different thicknesses reveals a 3D growth mode. Partial decomposition of MoOx was discovered, which helps in the formation of ohmic contact between MoOx and Al. The potential for application in deep ultraviolet light-emitting-diodes (DUV-LEDs) has also been demonstrated. (C) 2020 Optical Society of America |
学科主题 | Optics |
内容类型 | 期刊论文 |
源URL | [http://ir.nimte.ac.cn/handle/174433/19791] |
专题 | 2020专题 |
作者单位 | 1.Guo, W (corresponding author), Univ Chinese Acad Sci, Beijing 100049, Peoples R China. 2.Guo, W (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. |
推荐引用方式 GB/T 7714 | Li, Liang,Cui, Mei,Shao, Hua,et al. Demonstration of ohmic contact using MoOx/Al on p-GaN and the proposal of a reflective electrode for AlGaN-based DUV-LEDs[J]. OPTICS LETTERS,2020,45(8):2427-2430. |
APA | Li, Liang.,Cui, Mei.,Shao, Hua.,Dai, Yijun.,Chen, Li.,...&Ye, Jichun.(2020).Demonstration of ohmic contact using MoOx/Al on p-GaN and the proposal of a reflective electrode for AlGaN-based DUV-LEDs.OPTICS LETTERS,45(8),2427-2430. |
MLA | Li, Liang,et al."Demonstration of ohmic contact using MoOx/Al on p-GaN and the proposal of a reflective electrode for AlGaN-based DUV-LEDs".OPTICS LETTERS 45.8(2020):2427-2430. |
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