The dual-injection Ge-on-Si photodetectors with high saturation power by optimizing light field distribution | |
Cui, Jishi3; Li, Tiantian2; Yang, Fenghe1; Cui, Wenjing3; Chen, Hongmin3 | |
刊名 | Optics Communications |
2021-02-01 | |
卷号 | 480 |
关键词 | Ge-on-Si photodetector Silicon photonics Evanescent wave coupling Saturated optical power |
ISSN号 | 00304018 |
DOI | 10.1016/j.optcom.2020.126467 |
产权排序 | 2 |
英文摘要 | In this work, we put forward the length design principle of the dual-injection integrated Ge-on-Si photodetectors based on the characteristics of the light field distribution. When the length of the absorption layer makes the maximum intensity of the incident light from both ends are alternately distributed, the light field distribution is more uniform. Based on this principle, the shorter photodetector could get better saturation performance. Two dual-injection photodetectors with the length of 6μm and 10μm have been investigated, the experimental results show that the saturation current of 6μm length device is 18.33% higher, and the bandwidth is 138.60% higher at 10 mW incident power comparing with the 10μm length device. The 6μm length photodetector realized a responsivity of 1.07 A/W, a bandwidth of 37.3 GHz at 50 μW luminous power @1550 nm. © 2020 Elsevier B.V. |
语种 | 英语 |
出版者 | Elsevier B.V., Netherlands |
WOS记录号 | WOS:000588332200013 |
内容类型 | 期刊论文 |
源URL | [http://ir.opt.ac.cn/handle/181661/93713] |
专题 | 光子网络技术研究室 |
通讯作者 | Cui, Jishi |
作者单位 | 1.Peking University Yangtze Delta Institute of Optoelectronics, Nantong; 226006, China 2.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS), Xi'an; 710119, China; 3.School of Information Engineering, Sanming University, Sanming; 365004, China; |
推荐引用方式 GB/T 7714 | Cui, Jishi,Li, Tiantian,Yang, Fenghe,et al. The dual-injection Ge-on-Si photodetectors with high saturation power by optimizing light field distribution[J]. Optics Communications,2021,480. |
APA | Cui, Jishi,Li, Tiantian,Yang, Fenghe,Cui, Wenjing,&Chen, Hongmin.(2021).The dual-injection Ge-on-Si photodetectors with high saturation power by optimizing light field distribution.Optics Communications,480. |
MLA | Cui, Jishi,et al."The dual-injection Ge-on-Si photodetectors with high saturation power by optimizing light field distribution".Optics Communications 480(2021). |
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