Material system for Bragg reflectors in long wavelength VCSELs
KWON, HOKI
2004-06-24
著作权人FINISAR CORPORATION
专利号US20040120375A1
国家美国
文献子类发明申请
其他题名Material system for Bragg reflectors in long wavelength VCSELs
英文摘要Distributed Bragg reflectors (DBRs), and VCSELs that use such DBRs, comprised of AlP layers on InP substrates. When grown on an InP substrate, if the critical layer thickness (tcrt) of AlP is greater than lambda/4nAlP, where nAlP is the index of refraction of InP and lambda is the wavelength, then the DBR can be grown using alternating layers of InP and AlP, wherein the thickness of the AlP is less than the critical thickness. If the critical layer thickness (tcrt) of AlP is greater than lambda/4nAlP, then the DBR mirror is grown using alternating layers of InP and of an AlP/InP superlattice, wherein the AlP/InP superlattice is comprised of InP and of AlP wherein the thickness of the AlP is less than the critical thickness.
公开日期2004-06-24
申请日期2002-12-20
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/93061]  
专题半导体激光器专利数据库
作者单位FINISAR CORPORATION
推荐引用方式
GB/T 7714
KWON, HOKI. Material system for Bragg reflectors in long wavelength VCSELs. US20040120375A1. 2004-06-24.
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