QQ客服 官方微博 反馈留言

	Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices
	LINDEN, KURT J.
	2006-06-01
著作权人	SPIRE CORPORATION
专利号	US20060115917A1
国家	美国
文献子类	发明申请
其他题名	Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices
英文摘要	Methods are disclosed generally directed to design and synthesis of quantum dot nanoparticles having improved uniformity and size. In a preferred embodiment, a release layer is deposited on a semiconductor wafer. A heterostructure is grown on the release layer using epitaxial deposition techniques. The heterostructure has at least one layer of quantum dot material, and optionally, one or more layers of reflective Bragg reflectors. A mask is deposited over a top layer and reactive ion-beam etching applied to define a plurality of heterostructures. The release layer can be dissolved releasing the heterostructures from the wafer. Some exemplary applications of these methods include formation of fluorophore materials and high efficiency photon emitters, such as quantum dot VCSEL devices. Other applications include fabrication of other optoelectronic devices, such as photodetectors.
公开日期	2006-06-01
申请日期	2004-11-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/92901]
专题	半导体激光器专利数据库
作者单位	SPIRE CORPORATION
推荐引用方式 GB/T 7714	LINDEN, KURT J.. Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices. US20060115917A1. 2006-06-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。