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	Optical semiconductor integrated device, method of manufacturing optical semiconductor integrated device, and optical communication system
	WATANABE, ISAO; KOBAYASHI, MASAHIDE; SHIMIZU, JUNICHIRO
	2019-05-30
著作权人	RENESAS ELECTRONICS CORPORATION
专利号	US20190165541A1
国家	美国
文献子类	发明申请
其他题名	Optical semiconductor integrated device, method of manufacturing optical semiconductor integrated device, and optical communication system
英文摘要	A laser element and a modulator element respectively include first and second mesa portions provided to be connected above a substrate. The first and second mesa portions are formed using individual mask films (dielectric masks). In the first mesa portion, a p-type first clad layer not containing Al as the uppermost layer thereof covers the upper surface and each of the side surfaces of a multi-layer body (including an n-type optical guide layer, an active layer, a p-type optical guide layer, and a p-type semiconductor layer). In the first mesa portion, the multi-layer body including the semiconductor layers containing Al is covered with the p-type first clad layer not containing Al. This can prevent unneeded aluminum oxide from being generated and improve the crystallinities of the constituent layers of the second mesa portion. It is possible to maintain excellent optical coupling between the first and second mesa portions.
公开日期	2019-05-30
申请日期	2018-10-03
状态	申请中
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89917]
专题	半导体激光器专利数据库
作者单位	RENESAS ELECTRONICS CORPORATION
推荐引用方式 GB/T 7714	WATANABE, ISAO,KOBAYASHI, MASAHIDE,SHIMIZU, JUNICHIRO. Optical semiconductor integrated device, method of manufacturing optical semiconductor integrated device, and optical communication system. US20190165541A1. 2019-05-30.

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