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	Method of producing photoconductive structure provided with electrode between photoconductors
	FURANTSU AURATSUHIAA; GUIDOO BERU
	1977-12-21
著作权人	SIEMENS AG
专利号	JP1977153754A
国家	日本
文献子类	发明申请
其他题名	Method of producing photoconductive structure provided with electrode between photoconductors
英文摘要	A method for producing a light conductor structure having a pair of light conductors embedded in a substrate and electrodes arranged between and along the light conductors, which structure is particularly adapted for use as an electrically controllable coupler, characterized by providing a substrate of an electro-optical material having a c-axis parallel to one surface of the substrate and extending at right angles to the longitudinal axes of the later formed light electrodes, forming a layer of polycrystalline silicon in zones of the substrate, which lie adjacent to second zones of said one surface in which second zones the light conductors will be formed; applying a layer of diffusion material to the silicon layer and the second zones which are free of silicon; diffusing the diffusion material into the substrate by heating to an elevated temperature to form light conductors by increasing the index of refraction of the light conductor above the index of refraction of the remaining portions of the substrate; applying a layer of chrome to the light conductors and the diffusion material disposed on the layer of silicon; removing the silicon layer and the layers of diffusion material and chrome carried thereon; applying a positive-acting layer of photo-lacquer; exposing the photo-lacquer through the substrate with the chrome covering the light conductors acting as a mask; developing the photo-lacquer layer to remove the exposed portions and retaining the unexposed portions overlying the light conductors; applying a metal layer to form electrodes adjacent to the light conductors; removing the remaining portion of the photo-lacquer layer; and then etching away the chrome layer lying on the light conductors.
公开日期	1977-12-21
申请日期	1977-06-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89886]
专题	半导体激光器专利数据库
作者单位	SIEMENS AG
推荐引用方式 GB/T 7714	FURANTSU AURATSUHIAA,GUIDOO BERU. Method of producing photoconductive structure provided with electrode between photoconductors. JP1977153754A. 1977-12-21.

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