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	Semiconductor light emitting device
	SHIMA KATSUTO; TAKAGI NOBUYUKI
	1979-07-24
著作权人	FUJITSU LTD
专利号	JP1979093380A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting device
英文摘要	PURPOSE:To strongly perform enclosing of power supply and to enable the delivery only for uni-mode, by taking GaAlAs for the semiconductor crystal enclosing the emplanted hetero construction. CONSTITUTION:On the substrate 1 consisting of n type GaAs crystal, the layer 2 consisting of GaAlAs crystal is grown with liquid phase eptiaxial growing method etc. For example, with conventional photolingraphy, the phtterning of the substrate 1 and the crystal layer 2 is made, forming the groove 3 reaching the substrate Next, with multi-layer liquid phase epitaxial growing method, the clad layer 4 consisting of the n type GaAlAs crystal, active layer 5 consisting of GaAs crystal, clad layer 6 of p type GaAlAs crystal, and the electrode contact layer 7 of p type GaAs crystal, are grown in the groove 3 only, constituting complete hetero consturction. Thus, the enclosing of current and the production of uni-mode laser light can more effectively be made.
公开日期	1979-07-24
申请日期	1977-12-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89787]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	SHIMA KATSUTO,TAKAGI NOBUYUKI. Semiconductor light emitting device. JP1979093380A. 1979-07-24.

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