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	Semiconductor laser device
	NAMISAKI HIROBUMI; TAKAMIYA SABUROU; SUZAKI WATARU
	1980-11-05
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1980141775A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To increase the output of a semiconductor laser device while retaining the stable oscillating mode thereof by forming two adjacent sides of a first semiconductor region becoming the active region of a quadrilateral in cross section of material having higher forbidden band width than the active region or the same forbidden band width as that in the semiconductor region. CONSTITUTION:A p-type GaAs active region 10, a p-type GaAlAs region 2 and an n-type GaAs region 11 are formed in x-y cross section in the vicinity of the active region. Thus, these regions are enclosed in the same mechanism in both x- and y- directions. GaAs and GaAlAs heterojunctions are formed in the boundaries between the adjacent two sides of the active region of quadrilateral shape, and GaAs pn-junction is formed in the boundaries between the opposite other two sides. Thus, since these regions can be widened in width in both x- and y-directions, it can increase the sectional areas thereof largely.
公开日期	1980-11-05
申请日期	1979-04-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89774]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	NAMISAKI HIROBUMI,TAKAMIYA SABUROU,SUZAKI WATARU. Semiconductor laser device. JP1980141775A. 1980-11-05.

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