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	TSUCHA MASAAKI; HANEDA MAKOTO
	1993-09-29
著作权人	HITACHI TOBU SEMIKONDAKUTA KK
专利号	JP1993068872B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To reduce leakage currents by forming a buried layer formed to the upper section of a blocking layer extending on both sides of an active layer in double layer structure, bringing impurity concentration in a lower layer in the buried layer in concentration in which the lower layer is not inverted into a p type on the manufacture of the buried layer and shaping an upper layer in the buried layer in a high resistance layer. CONSTITUTION:A p type InP blocking layer 6, a buried layer 7 consisting of an n type InP buried lower layer 16 and an n type InP buried upper layer 17 and an InGaAsP cap layer 8 are buried continuously to a section indented through etching through a liquid phase epitaxial method in succession. Impurity concentration in the layer 6 is brought to a value such as 1X10 atoms.cm, and impurity concentration in the buried lower layer 16 shaped so as to constitute a p-n junction between the layer 6 and the lower layer 16 is brought to a value such as 2X10atoms.cm, and these layers 6, 16 are formed in concentration and thickness in which they are not inverted into a p type on the formation of the buried layer 17 and the cap layer 8. Accordingly, leakage currents passing through the buried lower layer 16, the blocking layer 6 and a buffer layer 2 through the buried upper layer 17 from a clad layer 4 and an ohmic contact layer 12 are hardly generated.
公开日期	1993-09-29
申请日期	1984-04-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89714]
专题	半导体激光器专利数据库
作者单位	HITACHI TOBU SEMIKONDAKUTA KK
推荐引用方式 GB/T 7714	TSUCHA MASAAKI,HANEDA MAKOTO. -. JP1993068872B2. 1993-09-29.

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