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	A semiconductor material comprising two dopants
	ALISTAIR, HENDERSON, KEAN; HARUHISA, TAKIGUCHI
	2000-12-27
著作权人	SHARP KABUSHIKI KAISHA
专利号	GB2351390A
国家	英国
文献子类	发明申请
其他题名	A semiconductor material comprising two dopants
英文摘要	A semiconductor layer is co-doped with two dopants. The first dopant is to generate charge carriers in the semiconductor material, and the second dopant is to promote atomic disorder within the material. When the semiconductor material is annealed, the second dopant becomes mobile and moves through the lattice so as to promote atomic disorder. This eliminates unwanted effects such as, for example, a reduction in the forbidden bandgap that can otherwise arise as a result of atomic ordering. The first dopant does not significantly diffuse during the annealing process. The amount of diffusion of the second dopant during the annealing can be increased by making the initial concentration of the second dopant non-uniform over the volume of the semiconductor material, e.g. by forming w -doped layers. The first and second dopants are preferably of the same conductivity type, and may be Carbon and beryllium respectively, for p-doping in an (Al,Ga,In) P layer. The material may be used as a cladding layer in a semiconductor laser.
公开日期	2000-12-27
申请日期	1999-06-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89609]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	ALISTAIR, HENDERSON, KEAN,HARUHISA, TAKIGUCHI. A semiconductor material comprising two dopants. GB2351390A. 2000-12-27.

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