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	Semiconductor laser device
	MURAKAMI TAKASHI
	1985-09-30
著作权人	MITSUBISHI DENKI KK
专利号	JP1985192379A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To render thermal destruction difficult to occur at an end face and thereby to realize high output by a method wherein the liquid phase crystal growth method is employed to realize an activation layer thinner in the vicinity of the end face and provided with a larger band gap. CONSTITUTION:On a substrate 1a, a lower clad layer 2a, activation layer 3a, uppsr clad layer 4a, contact layer 5 are grown by the liquid phase growth method, in said order. In the vicinity of the light-emitting end face, the band gap of the activation layer 3a grown on a ridge 8 is larger than that of an activation layer 3al located within the chip. It hollows that the end face is transparent to the light generated within the chip and does not absorb the light. It is difficult for the end surface to be damaged due to high temperatures attributable to absorbed light. Near the end face, where the activation layer 3a is thin, light oozes out to arrive at the clad layers 2a, 4a, lowering optically energy density. With the window and the light-emitting portion growing simultaneously, they are less prone to have faults and are easier to manufacture, leading to a high energy laser.
公开日期	1985-09-30
申请日期	1984-03-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89213]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KK
推荐引用方式 GB/T 7714	MURAKAMI TAKASHI. Semiconductor laser device. JP1985192379A. 1985-09-30.

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