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	Wavelength-tunable semiconductor laser device
	SUEMATSU YASUHARU; ARAI SHIGEHISA
	1990-08-17
著作权人	TOKYO INST OF TECHNOL
专利号	JP1990207581A
国家	日本
文献子类	发明申请
其他题名	Wavelength-tunable semiconductor laser device
英文摘要	PURPOSE:To assure continuously variable wavelength control and prevent any change in reflectance loss upon the wavelength control from being produced by integrating an optical wavelength layer which has a refractive index controllable by current injection or electric field application within the same optically transparent region in those of the distributed diffraction grating reflector having wavelength selectivity and of an active layer providing an optical gain. CONSTITUTION:There are successively laminated on a semiconductor substrate 1 a cladding layer 2, an optical waveguide layer 3 which forms a distributed diffraction grating in a direction of laser light propagation, an intermediate layer 4, an active layer 5, an optical waveguide layer 6, a cladding layer 7, and an electrode formation low resistance layer 8. Only a central portion which forms a laser resonator is left behind in the direction of the laser light propagation and an upper layer portion is removed to the half of the cladding layer 7. Simultaneously, part of right and left opposite end parts or any one side part is removed in the direction of the laser light propagation to expose the intermediate layer 4. A laser driving electrode 9 is provided on the electrode formation low resistance layer 8, and a current injection electrode or an electric field application electrode 11 both for wavelength control is provided on the intermediate layer 4 or under the semiconductor substrate 1 or under the cladding layer 2.
公开日期	1990-08-17
申请日期	1989-02-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88850]
专题	半导体激光器专利数据库
作者单位	TOKYO INST OF TECHNOL
推荐引用方式 GB/T 7714	SUEMATSU YASUHARU,ARAI SHIGEHISA. Wavelength-tunable semiconductor laser device. JP1990207581A. 1990-08-17.

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