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	Semiconductor laser and manufacturing thereof
	TANAKA HARUO; NAKADA NAOTARO; MUSHIGAMI MASAHITO; ISHIDA YUUJI; FUKADA HAYAMIZU
	1986-07-24
著作权人	ローム株式会社
专利号	JP1986163688A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser and manufacturing thereof
英文摘要	PURPOSE:To improve electrical and optical characteristics by forming a protective layer between a first upper clad layer and a second upper clad layer and giving the protective layer a band gap equal to or higher than an active layer by a quantum effect. CONSTITUTION:A first growth layer by a lower clad layer 21, an active layer 22, a first upper clad layer 23, a protective layer 24, an AlGaAs layer 25 and a current limiting layer 26 is formed onto a substrate 10 consisting of N-type GaAs. A striped groove 30 with a tapered surface 31 in depth, through which the surface of the layer 24 is exposed, and narrow width toward the substrate 10 side is shaped along the laser cavity length of a semiconductor laser 1 to the first growth layer. A second growth layer is formed by a second upper clad layer 41 and a cap layer 42. The second growth layer is laminated on the upper section of the first growth layer. According to the constitution, the band gap of the layer 24 is made wider than the layer 22 by a quantum effect. Consequently, the electrical and optical properties of the laser 1 can be improved.
公开日期	1986-07-24
申请日期	1985-01-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88314]
专题	半导体激光器专利数据库
作者单位	ローム株式会社
推荐引用方式 GB/T 7714	TANAKA HARUO,NAKADA NAOTARO,MUSHIGAMI MASAHITO,et al. Semiconductor laser and manufacturing thereof. JP1986163688A. 1986-07-24.

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