| 半導体レ-ザ装置およびその製造方法 | |
| ▲吉▼川 昭男; 杉野 隆 | |
| 1994-01-26 | |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 专利号 | JP1994007621B2 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置およびその製造方法 |
| 英文摘要 | PURPOSE:To obtain a laser device, which oscillates in a single transverse mode and operates at a low threshold value, by a method wherein a multilayer thin film is constituted up to right over the active layer located on the stripped protrusion part of the conductive substrate and a thin film with the same conductive type as that of the substrate is provided thereon. CONSTITUTION:A roughness is provided on the (100) plane of an N type GaAs substrate 10 in parallel to the direction of by performing a chemical etching. After an N type Ga1-XAlXAs clad layer 11, an undoped Ga1-YAlYAs (0<=y |
| 公开日期 | 1994-01-26 |
| 申请日期 | 1984-03-27 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88238]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ▲吉▼川 昭男,杉野 隆. 半導体レ-ザ装置およびその製造方法. JP1994007621B2. 1994-01-26. |
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