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	Semiconductor device
	DOBSON CHRISTOPHER DAVID
	1966-08-24
著作权人	STANDARD TELEPHONES AND CABLES LIMITED
专利号	GB1040400A
国家	英国
文献子类	授权发明
其他题名	Semiconductor device
英文摘要	1,040,400. PN Junction devices. STANDARD TELEPHONES & CABLES Ltd. Nov. 27, 1963, No. 46849/63. Heading H1K. A PN junction device is produced by forming a layer of one conductivity type on a plane face of an insulating or intrinsic semi-conductor substrate, forming a second plane face at an angle to the first and producing a layer of the opposite conductivity type thereon, one face of which forms a PN junction with the edge of the first layer. In the embodiment the substrate is a cylindrical body of intrinsic gallium arsenide and the layers are formed by impurity diffusion or epitaxial deposition. At least the first layer, which is formed on a (100) face of the substrate, is masked during production of the second layer. The second face is produced by cleavage along a (110) plane. Individual elements for use as lasers are divided from the resulting body by cleavage along parallel 110 planes perpendicular to the second face.
公开日期	1966-08-24
申请日期	1963-11-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88199]
专题	半导体激光器专利数据库
作者单位	STANDARD TELEPHONES AND CABLES LIMITED
推荐引用方式 GB/T 7714	DOBSON CHRISTOPHER DAVID. Semiconductor device. GB1040400A. 1966-08-24.

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