Method for producing a semiconductor laser diode
CHALY, VIKTOR PETROVICH; POGORELSKY, YURY VASILIEVICH; ALEXEEV, ALEXEI NIKOLAEVICH; KRASOVITSKY, DMITRY MIKHAILOVICH; SHKURKO, ALEXEI PETROVICH; VEDENEEV, ALEXANDR ALEXANDROVICH; SCHEVLYUGA, VLADIMIR MIKHAILOVICH; ELTSOV, KONSTANTIN NIKOLAEVICH
2004-03-18
著作权人CHALY, VIKTOR PETROVICH
专利号WO2004023535A1
国家世界知识产权组织
文献子类发明申请
其他题名Method for producing a semiconductor laser diode
英文摘要The invention can be used for producing semiconductor laser diodes. The inventive method for producing a semiconductor laser diode consists in producing semiconductor laser heterostructure based on the composition of the group three and five elements, dividing said structure into separate strips, cleaning the side faces thereof in vacuum, applying a protective coating to said side faces. Afterwards, a reflective coating is applied to one side face, an antireflective coating being applied to the opposite side face. In order to clean the side faces of the semiconductor laser heterostructure, the strips are heated to a temperature ranging from 580 °C to 760 °C, cooled to a temperature ranging from 0 °C to 240 °C, the side faces are coated with 0.1 to 1000 monolayers of iodine or bromine or chlorine and the strips are heated again to the temperature of 580 °C to 760 °C. During the heating and cooling of the bands of the semiconductor laser heterostructure, the vapours of the group five element contained in said semiconductor laser heterostructure are transferred to said strips. Said invention makes it possible to prevent defect formation on the near-surface layer of the strips semiconductor laser heterostructure of the semiconductor laser heterostructure during the cleaning thereof, thereby preventing a subsequent degradation of the laser diode in service.
公开日期2004-03-18
申请日期2003-03-17
状态未确认
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/88186]  
专题半导体激光器专利数据库
作者单位CHALY, VIKTOR PETROVICH
推荐引用方式
GB/T 7714
CHALY, VIKTOR PETROVICH,POGORELSKY, YURY VASILIEVICH,ALEXEEV, ALEXEI NIKOLAEVICH,et al. Method for producing a semiconductor laser diode. WO2004023535A1. 2004-03-18.
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