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	Manufacture of semiconductor device
	HASHIMOTO AKIHIRO; KOBAYASHI NOBUO; KAMIJO TAKESHI
	1988-12-19
著作权人	OKI ELECTRIC IND CO LTD
专利号	JP1988310189A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor device
英文摘要	PURPOSE:To eliminate the formation of a high resistance layer on a regrown boundary and the difficulty of a regrowth by disordering the superlattice structure of a superlattice structure clad layer except a stripe by heat treating by means of impurity diffusion from a current narrowing layer. CONSTITUTION:After a current narrowing layer is formed in a buried shape except a stripe on a substrate 1, a clad layer 4, an active layer 5, a clad layer 6 and a cap layer 7 of a superlattice structure are sequentially grown on the substrate Then, the superlattice structure of the layer 4 is then disordered by heat treating except the stripe by means of an impurity diffusion from the narrowing layer. Accordingly, the step of regrowing on a crystal layer having high mixed crystal ratio of exposed aluminum is eliminated. Thus, a high resistance layer is not formed on a regrown boundary and the difficulty of regrowth is eliminated.
公开日期	1988-12-19
申请日期	1987-06-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88135]
专题	半导体激光器专利数据库
作者单位	OKI ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	HASHIMOTO AKIHIRO,KOBAYASHI NOBUO,KAMIJO TAKESHI. Manufacture of semiconductor device. JP1988310189A. 1988-12-19.

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