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	1982-06-04
著作权人	SHARP KK
专利号	JP1982026435B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To shorten a resonance length to make an element high-efficiency by denoting the resonance length of a resonator, the gain wave length width, the oscillation light wave length and the refractive index of the laser medium in wave length lambda as L, A, lambda and n respectively and regulating the relation among them. CONSTITUTION:Al2O3 is caused to adhere onto the surface of the single crystal for double-hetero junction-type semiconductor element, and is subjected to photo etching to form bridge 1 Next, stripe structure part 14 is formed between bridges 11, and the P side elctrode consisting of Au-Cr, etc., is evaporated and is stuck to only side face and the bottom face of the V-shaped etching hole. After that, the whole of the single crystal is lapped to a prescribed thickness, and the N side electrode consisting of Au-Ge-Ni, etc., is caused to adhere to the reverse face. Next, the single crystal is cut along cutting line 16, and is further cut to pellets along dotted line 17, thereby making elements having a shortened resonance length. In this constitution, the relation among resonance length L and other constituents is regulated to a value shown by the expression.
公开日期	1982-06-04
申请日期	1978-05-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88108]
专题	半导体激光器专利数据库
作者单位	SHARP KK
推荐引用方式 GB/T 7714	-. -. JP1982026435B2. 1982-06-04.

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