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	Semiconductor laser device
	NISHIMOTO HIROYUKI
	1990-11-30
著作权人	NEC CORP
专利号	JP1990291188A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To improve the high-frequency characteristics of a semiconductor laser by a method wherein the part other than the vicinity of the luminous region of the laser is covered with a high-resistance semiconductor layer and at the same time, an active layer is formed into a buried structure. CONSTITUTION:Almost half of an N-type InP semi-insulative substrate 1 with an InP high-resistance layer 9 laminated on it is etched using a silicon nitride film 11 as a mask. Then, an n-type InP buffer layer 2, an InGaAsP active layer 3, a p-type InP clad layer 4 and a p-type InGaAsP contact layer 5 are formed in order on the stepped base of the surface of an inverse mesa using the film 11 as a mask by an MOCVD device. Then, after the film 11 is removed using a buffered hydrofluoric acid, a silicon nitride film 12 is anew formed and a switching is performed until the layer 2 is exposed using this film 12 as a mask. Then, after the layer 3 is selectively etched using a sulfuric acid etchant, an n-type InP mass transport buried layer 20 is formed. After the film 12 is removed using a buffered hydrofluoric acid, a p side electrode 7 is deposited. Moreover, an n side electrode 8 is formed on the side of the substrate Thereby, a signal current is almost all fed to the layer 3 up to its high-frequency band and a semiconductor laser having superior high-frequency characteristics is obtained.
公开日期	1990-11-30
申请日期	1989-05-01
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88055]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	NISHIMOTO HIROYUKI. Semiconductor laser device. JP1990291188A. 1990-11-30.

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