| Distributed feedback type semiconductor laser | |
| KUWAMURA YUJI | |
| 1987-09-16 | |
| 著作权人 | NEC CORP |
| 专利号 | JP1987209886A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a uniaxial-mode oscillating element in high probability by forming a multilayer film filter having wavelength selectivity on at least one light emitting surface of a distributed feedback type semiconductor (DFB) laser. CONSTITUTION:A nonreflecting coating (or low reflecting film) film 4 is formed on one cleaved surface of a DFB laser 1, and a multilayer film in which n (n: positive integer number) of SiO2 films 2 and amorphous Si 3 are sequentially laminated on the remaining cleaved surface is formed. The multilayer film of such a structure has an abrupt wavelength dependency to provide nonsymmetrical DELTAbetaL-alphaL characteristic for Bragg wavelength. Thus, the minimum of the reflecting mirror loss alphaL exists at one position to enhance the probability of selectively oscillating only in a uniaxial mode. |
| 公开日期 | 1987-09-16 |
| 申请日期 | 1986-03-10 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87938]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KUWAMURA YUJI. Distributed feedback type semiconductor laser. JP1987209886A. 1987-09-16. |
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