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	半導体装置
	伊藤 和弘; 松田 広志; 藤原 一郎; 長妻 一之; 大内 博文
	1994-12-12
著作权人	株式会社日立製作所
专利号	JP1994101582B2
国家	日本
文献子类	授权发明
其他题名	半導体装置
英文摘要	PURPOSE:To provide a structure to obtain a preferable crystal in a light emit ting unit such as a light emitting diode or a semiconductor laser of III-V com pound semiconductor of 1mum band of light wavelength and a photoreceptor such as a PIN photodiode or avalanche photodiode and high speed and high output specially in the light emitting unit. CONSTITUTION:An active layer of Ga1-xInxAs1-yPy (1>x, y>=0) is provided, a layer of Alm-1InmAs1-nPn (0.7>m>0.3, 0.4>n>=0) is contacted at least with one of the active layer, and at least part of the Alm-1InmAs1-nPn is of P-type. That is, a clad layer in converted from the conventional InP to the Al1-mInmAs1-nPn to eliminate the dissolving of a crystal by a solution growing method, and since the AlGaAsP has larger band gap than the InP, an energy gap difference between the active layer and the clad layer is increased to approx. 0.4eV to completely enclose the carrier, thereby obtaining a high speed and high output light emitting unit.
公开日期	1994-12-12
申请日期	1985-06-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87837]
专题	半导体激光器专利数据库
作者单位	株式会社日立製作所
推荐引用方式 GB/T 7714	伊藤 和弘,松田 広志,藤原 一郎,等. 半導体装置. JP1994101582B2. 1994-12-12.

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