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	半導体レーザ装置
	広瀬 正則; ▲吉▼川 昭男; 粂 雅博; 山本 敦也; 中村 晃; 杉野 隆
	1996-03-21
著作权人	松下電器産業株式会社
专利号	JP1996028547B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ装置
英文摘要	PURPOSE:To enable integration of a laser device of this design with other electronic circuit elements by a method wherein a light reflecting means used for constituting a resonator is provided in parallel with a primary face of a substrate, and a region whose conductivity type is the same as that of a second clad layer is provided to the peripheral section of a buried layer so as to make its base reach to the second clad layer. CONSTITUTION:A light reflecting means 6 used for constituting a resonator is provided in parallel with a primary face of a substrate 1, so that an optical output can be extracted from the substrate primary face side. And, the substrate 1 is a semi-insulator, a region 8 is provided to a peripheral section of a buried layer in such a manner that the top of the region 8 is level with the primary face of the substrate 1 and the base is in contact with a second clad layer 3, where the region 8 is the same conductivity type as the second clad layer 3, and the other electrode can be built on the region 8, so that a laser device of this design can be integrated together with other electronic circuit elements.
公开日期	1996-03-21
申请日期	1987-10-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87647]
专题	半导体激光器专利数据库
作者单位	松下電器産業株式会社
推荐引用方式 GB/T 7714	広瀬 正則,▲吉▼川 昭男,粂 雅博,等. 半導体レーザ装置. JP1996028547B2. 1996-03-21.

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