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	Semiconductor laser
	KOBAYASHI KENICHI
	1985-09-24
著作权人	NIPPON ELECTRIC CO
专利号	JP1985187083A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To realize a high-energy semiconductor laser stably oscillating in a single transverse mode by a method wherein the laser device is constituted of a mesa- stripe geometry semiconductor layer, with its refractive index lower than that of an activation layer, sandwiched between two semiconductor layers, with their refractive index lower than that of said mesa-stripe, enclosing the mesa from both sides. CONSTITUTION:A mesa 100 is constituted of a first semiconductor layer 30 that is equipped with a refractive index higher than that of an activation layer 4 and is sandwiched between second semiconductor layers 20 with their refractive index lower than the first semiconductor layer 30. The entirety is then covered by a second clad layer 5. The activation layer 4 on the mesa 100 constitutes an optical waveguide. With the refractive index of the first semiconductor layer 30 being higher than that of the second semiconductor layers 20, the equivalent refractive index of the middle portion A of the activation layer 4 is higher than that of the peripheral portions B. The difference between the two refractive indexes is adequately lower than in a conventional BH type. Accordingly, a light beam under guidance is W1 wide and, with the refractive index at the middle portion being high enough, a single transverse mode may be maintained even when the W1 is larger.
公开日期	1985-09-24
申请日期	1984-03-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87646]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	KOBAYASHI KENICHI. Semiconductor laser. JP1985187083A. 1985-09-24.

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