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	Semiconductor laser and manufacture thereof
	TANAKA HARUO; MUSHIGAMI MASAHITO; NAKADA NAOTARO
	1986-07-26
著作权人	ROHM KK
专利号	JP1986166088A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser and manufacture thereof
英文摘要	PURPOSE:To improve the state of laminating of a second growth layer while stabilizing the electric properties and optical properties of a semiconductor laser by selectively leaving only a protective layer in an etching process. CONSTITUTION:A first growth layer 20 is constituted by a lower clad layer 21, an active layer 22, a first upper clad layer 23, a protective layer 24 and an evaporation preventive layer 25. A striped groove 30' having depth, in which the surface of the first upper clad layer 23 is exposed, and a tapered surface 31, width thereof is narrowed toward the substrate 10 side, is shaped along the laser resonator wavelength of a semiconductor laser 1 to the first growth layer 20. A second growth layer 40 is constituted by a second upper clad layer 41 and a cap layer 42. The second growth layer 40 is laminated on the upper section of the first growth layer 20 in a shape that it is caved-in in response to the form of the striped groove 30'.
公开日期	1986-07-26
申请日期	1985-01-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87571]
专题	半导体激光器专利数据库
作者单位	ROHM KK
推荐引用方式 GB/T 7714	TANAKA HARUO,MUSHIGAMI MASAHITO,NAKADA NAOTARO. Semiconductor laser and manufacture thereof. JP1986166088A. 1986-07-26.

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