QQ客服 官方微博 反馈留言

	Semiconductor laser
	IWANO HIDEAKI
	1988-04-04
著作权人	SEIKO EPSON CORP
专利号	JP1988073581A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain a semiconductor laser, which has small oscillation threshold current density, generates single transverse mode oscillation and can be manufactured with excellent yield in a uniform large area, by specifying a buried semiconductor layer from the periodic table and changing the semiconductor layer into a semi-insulating compound semiconductor layer. CONSTITUTION:When a II-VI compound semiconductor layer 103 consists of ZnSl, it has index difference extremely larger than the refractive index of an active layer 109 composed of GaAs, etc., and the efficiency of optical confinement is improved, thus lowering injection current density. Since a II-VI compound semiconductor has an extremely large band gap, the resistivity of a thin-film through an MOCVD method is increased, and the buried layer 103 can prevent inJection currents completely. Consequently, threshold current density can further be lowered. The active layer 109 is inverted-mesa-etched in a striped manner, and the buried layer 103 is shaped, thus acquiring a flat surface. The width of the actual active layer 109 is made narrower than that of a resist pattern in a photolithographic process, thus resulting in a single oscillation transverse mode, then allowing stable laser operation.
公开日期	1988-04-04
申请日期	1986-09-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87377]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	IWANO HIDEAKI. Semiconductor laser. JP1988073581A. 1988-04-04.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。