In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy

	In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy
	Yu, J. L. ; Chen, Y. H. ; Bo, X. ; Jiang, C. Y. ; Ye, X. L. ; Wu, S. J. ; Gao, H. S.
刊名	journal of applied physics
	2013
卷号	113 期号:8 页码:083504
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24367]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Yu, J. L.,Chen, Y. H.,Bo, X.,et al. In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy[J]. journal of applied physics,2013,113(8):083504.
APA	Yu, J. L..,Chen, Y. H..,Bo, X..,Jiang, C. Y..,Ye, X. L..,...&Gao, H. S..(2013).In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy.journal of applied physics,113(8),083504.
MLA	Yu, J. L.,et al."In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy".journal of applied physics 113.8(2013):083504.