InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration

	InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration
	Li Xin-Kun ; Jin Peng ; Liang De-Chun ; Wu Ju ; Wang Zhan-Guo
刊名	chinese physics b
	2013
卷号	22 期号:4 页码:048102
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24327]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Li Xin-Kun,Jin Peng,Liang De-Chun,et al. InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration[J]. chinese physics b,2013,22(4):048102.
APA	Li Xin-Kun,Jin Peng,Liang De-Chun,Wu Ju,&Wang Zhan-Guo.(2013).InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration.chinese physics b,22(4),048102.
MLA	Li Xin-Kun,et al."InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration".chinese physics b 22.4(2013):048102.